研究方向：

先进工艺节点下逻辑器件的器件设计及工艺研发

先进图像传感器件研发

教育背景：

2011年09月 - 2016年07月浙江大学，博士

2007年09月 - 2011年06月中南大学，学士

学术经历：

2013年11月 - 2014年05月德州大学圣安东尼奥分校物理与航天系（UTSA），访问学者

2018年08月 - 2019年12月格科微电子（上海）有限公司，像素设计工程师

代表性成果：

SCI期刊论文

[1] Zhu, Xiaona*; Ding, Rongzheng; Tao, Ouwen; Zhao, Yage; Tang, Peishun; Zhang, David Wei; Lu, Ye*; Yu, Shaofeng; A combined N/PFET CFET-based design and logic technology framework for CMOS applications IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol.42, p.4999-5005, 2023.

[2] Zhu, Xiaona*; Shen, Lei; Li, Yu-Chun; Lv, Yu-Dong; Shi, Cai-Yu; Huang, Teng; Huang, Zi-Ying; Zhang, David Wei; Lu, Hong-Liang*; Large positive V_FB shift achieved by a band alignment modulated with insertion of Ga₂O₃ dipole layer Appl. Phys. Lett., vol.126, p.083506, 2025.

[3]Zhu, Chiang; Wang, Sikai; Li, Yuchun; Zhu, Xiaona*; Yu, Shaofeng; Zhang, David; Impact of channel surface roughness as a new variability source in nanosheet GAAFETs IEEE Electron Device Letters, p.1-1, 2025.

[4] Xu, Zhongshan; Zhao, Guo-Dong; Ding, Rongzheng; Zhao, Yage; Xie, Qing; Lv, Yudong; Chen, Mingyan; Zhu, Xiaona*; Yu, Shaofeng; Impact of lanthanum-induced dipoles on the tunneling and dielectric properties of gate-stack IEEE Transactions on Electron Devices, vol.70, p.1589-1594, 2023.

[5] Li, Yu-Chun; Huang, Teng; Li, Xiao-Xi; Zhu, Xiaona*; Zhang, David Wei; Lu, Hong-Liang*; Domain switching characteristics in Ga-doped HfO₂ ferroelectric thin films with low coercive field Nano Letters, vol.24, p.6585-6591, 2024.

[6] Sun, Bingqi; Xu, Zhongshan; Ding, Rongzheng; Yang, Jingwen; Chen, Kun; Xu, Saisheng; Xu, Min; Lu, Ye; Zhu, Xiaona*; Yu, Shaofeng, David Zhang*; Analytical model of CFET parasitic capacitance for advanced technology nodes IEEE Transactions on Electron Devices, vol.69, p.936-941, 2022.

[7] Xu, Zhongshan; Zhu, Xiaona*; Zhao, Guo-Dong*; Zhang, David Wei; Yu, Shaofeng; Oxygen vacancies stabilized 180° charged domain walls in ferroelectric hafnium oxide Appl. Phys. Lett., vol.124, p.012902, 2024.

[8] Li, Yu-Chun; Li, Xiao-Xi*; Huang, Zi-Ying; Zhu, Xiaona*; Zhang, David Wei; Lu, Hong-Liang*; The enhanced polarization switching speed and endurance in Hf_0.5Zr_0.5O₂ ferroelectric thin film by modulating oxygen dose in ferroelectric layers IEEE Electron Device Letters, vol.45, p.829-832, 2024.

[9] Lv, Yu-Dong; Shen, Lei; Li, Yu-Chun; Shi, Cai-Yu; Huang, Zi-Ying; Yu, Xing; Zhu, Xiaona*; Lu, Hong-Liang*; Yu, Shaofeng; Zhang, David Wei; Atomic-layer-deposited Al₂O₃ layer inserted in SiO₂/HfO₂ gate-stack-induced positive flat-band shift with dual interface dipoles for advanced logic device ACS Applied Nano Materials, vol.7, p.28496-28503, 2024.

[10] Ding, Rongzheng; Liu, Yang; Zhao, Guodong; Xu, Zhongshan; Zhao, Yusi; Tang, Huawei; Zhao, Yage; Xie, Qing; Lu, Ye; Zhu, Xiaona*, Yu, Shaofeng*, David Zhang; A novel zigzag SRAM bitcell design in the complementary FET framework IEEE Transactions on Electron Devices, vol.70, p.4622-4627, 2023.

[11] Huang, Teng; Li, Yu-Chun; Chen, Chu-Fan; Li, Xiao-Xi; Gu, Ze-Yu; Zhang, David Wei; Zhu, Xiaona*; Lu, Hong-Liang*; Demonstration of robust breakdown reliability and enhanced endurance in gallium doped HfO₂ ferroelectric thin films IEEE Electron Device Letters, vol.44, p.1476-1479, 2023.

[12] Li, Yu-Chun; Li, Xiao-Xi; Huang, Teng; Gu, Ze-Yu; Yu, Qiu-Jun; Liu, Yin-Chi; Zhang, David Wei; Zhu, Xiaona*; Lu, Hong-Liang*; Enhanced memory properties of HfO₂-based ferroelectric capacitor by inserting Al₂O₃/ZrO₂ stack interfacial layer Appl. Phys. Lett., vol.122, p.172902, 2023.

[13] Zhao, Guo-Dong; Liu, Xingen; Ren, Wei; Zhu, Xiaona*; Yu, Shaofeng; Symmetry of ferroelectric switching and domain walls in hafnium dioxide Phys. Rev. B, vol.106, p.064104, 2022.

[14] Lv, Yu-Dong; Shen, Lei; Li, Yu-Chun; Zhu, Xiaona*; Lu, Hong-Liang*; Yu, Shaofeng; Zhang, David Wei*; Improved reliability of gate stack with aluminum-induced interface dipoles via laser spike annealing Materials Science in Semiconductor Processing, vol.200, p.110015, 2025.

[15] Zhu, Chiang; Zhu, Xiaona*; Yu, Shaofeng; Zhang, David Wei; Process-dependent evolution of channel stress and stress-induced mobility gain in FinFET, normal GAAFET, and Si/SiGe hybrid channel GAAFET IEEE Access, vol.13, p.21600-21609, 2025.

[16] Li, Yu-Chun; Xu, Zhongshan; Li, Xiao-Xi; Wu, Yishan; Zhu, Xiaona*; Ji, Zhigang; Li, Ming; Lu, Hong-Liang*; Zhang, David Wei; Huang, Ru; “Unveiling the role of domain wall propagation in enhancing switching properties of ferroelectric Ga-doped HfO₂ thin films” Materials Today Chemistry, vol. 49, p.103091,2025

[17] Li, Yuchun; Li, Xiaoxi; Xu, Zhongshan; Huang, Ziying; Yang, Yingguo; Zhu, Xiaona*; Li, Ming; David Wei, Zhang; Lu, Hongliang*; Crystal orientation-modulated ferroelectric and dielectric properties in Hf_0.5Zr_0.5O₂ thin films Sci. China Inf. Sci, vol. 68, p.160406, 2025.

[18] Liu, Yang; Peng, Peng; Xu, Zhong-Shan; Li, Yu-Chun; Zhu, Xiaona*; Zhang, David Wei; Yu, Shao-Feng; “P-type dipole element screening and diffusion analysis in gate stacks by first-principles calculations” AIP Advances, vol. 15, p.125105, 2025.

部分授权及申请专利

[1] 朱小娜，魏晨程，丁荣正，俞少峰. 重置金属栅的方法、半导体器件及电路. CN202211287237.3. 2026.（授权）

[2] 朱小娜, 朱驰昂, 俞少峰. 一种异质沟道环栅器件及制备方法. CN119421490B，2025.（授权）

[3] 朱小娜, 汤培顺, 朱驰昂. 一种CFET的门电路器件结构与工艺. CN119208330B，2025.（授权）

[4] 朱小娜，张卫. 一种环栅纳米片场效应晶体管及其制作方法. CN 202610685326.5，2026.（申请）

[5] 朱小娜，刘洋，张卫. 一种互补场效应晶体管及其制造方法. CN 202610401466.5, 2026.（申请）

[6] 朱小娜，邱雨晨，朱驰昂. 一种环栅场效应晶体管及其制作方法. CN202610685327.X, 2026. （申请）

[7] 朱小娜，刘洋，张卫，朱驰昂，张红梅. 互补场效应晶体管及其制造方法. CN 202512053733.2，2026. （申请）

[8] 朱小娜，张卫，邱雨晨，朱驰昂. 一种环栅纳米片晶体管及其制作方法. CN202610685324.6, 2026. （申请）

获奖或荣誉:

1.上海市扬帆人才

2.多次受邀在 CSTIC、ICSICT、ASICON、SSDM、IWAPS 等国际会议作邀请报告

3.2022年集成电路创新创业大赛国家级二等奖优秀指导老师奖

4.2025年“华为杯”第八届中国研究生创“芯”大赛优秀团队一等奖指导教师奖

5.指导研究生获CSTIC 2023 Best 10 Students' Paper Award

欢迎微电子、物理、材料、计算机人工智能等学科背景的学生加入课题组从事前沿工艺器件技术研究！