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周 鹏
副院长 教授 博士生导师
电        话:
65642198
邮        箱:
pengzhou@fudan.edu.cn
地        址:
复旦大学邯郸校区微电子学楼401室
研  究  所:
微纳电子器件研究所

研究方向:

新型二维层状半导体电子器件与特性研究

下一代CMOS兼容非易失存储器研究


教育背景:

复旦大学,物理学,博士


学术经历:

2013年12月-至今复旦大学,微电子学院,教授

2008年05月-2013年12月复旦大学,微电子学院,副研究员

2006年08月-2007年07月韩国,首尔国立大学,访问学者

2005年07月-2008年04月复旦大学,微电子学院,助理研究员

2000年07月-2005年06月复旦大学,信息科学与工程学院

1996年07月-2000年06月复旦大学,物理学系


荣誉称号:

国家教学成果二等奖, 第一完成人,2023

教育部自然科学二等奖,第一完成人,2022

上海市教学成果一等奖, 第一完成人,2022

上海市自然科学二等奖,第一完成人,2020

上海市青年科技杰出贡献奖,2020

国家杰出青年科学基金获得者,2019

上海市曙光学者,2018

科技部中青年领军人才,2018

国家自然基金委优秀青年,2016

上海市科技启明星,2013


代表性论文:

1. Ruge Quhe*, Ziye Di, Jiaxin Zhang, Yuxuan Sun, Lingxue Zhang, Ying Guo, Shuiyuan Wang *, and Peng Zhou (周鹏)*, Asymmetric conducting route and potential redistribution determine the polarization-dependent conductivity in layered ferroelectrics, (Nature Nanotechnology, 1-8, 2023). (通讯作者)

2. Yin Xia, Xinyu Chen, Jinchen Wei, Shuiyuan Wang, Shiyou Chen, Simin Wu, Minbiao Ji, Zhengzong Sun, Zihan Xu*, Wenzhong Bao (包文中)*, and Peng Zhou (周鹏)*, 12-inch growth of uniform MoS2 monolayer for integrated circuit manufacture, (Nature Materials, 22, 1324-1331, 2023).(通讯作者)

3. Xiaohe Huang, Chunsen Liu (刘春森)*, Zhaowu Tang, Senfeng Zeng, Shuiyuan Wang, and Peng Zhou (周鹏)*, An ultrafast bipolar flash memory for self-activated in-memory computing, (Nature Nanotechnology, 18, 486-492, 2023) .(通讯作者)

4. Ling Tong, Jing Wan (万景)*, Kai Xiao, Jian Liu, Jingyi Ma, Xiaojiao Guo, Lihui Zhou, Xinyu Chen, Yin Xia, Sheng Dai, Zihan Xu, Wenzhong Bao (包文中)* , and Peng Zhou (周鹏)*, Heterogeneous complementary field-effect transistors based on silicon and molybdenum disulfide, (Nature Electronics, 6, 37–44, 2023). (通讯作者)

5. Shuiyuan Wang,  Xiaoxian Liu,  Mingsheng Xu,  Liwei Liu, Deren Yang, and Peng Zhou (周鹏)*, Two-dimensional devices and integration towards the silicon lines, (Nature Materials, 21, 1225–1239, 2022). (通讯作者)

6. Zhenhan Zhang, Shuiyuan Wang, Chunsen Liu, Runzhang Xie, Weida Hu (胡伟达)* , and Peng Zhou (周鹏)*,All-in-one two-dimensional retinomorphic hardware device for motion detection and recognition, (Nature Nanotechnology, 17, 27–32, 2022). (通讯作者)

7. Lan Liu, Chunsen Liu, Lilai Jiang, Jiayi Li, Yi Ding, Shuiyuan Wang, Yu-Gang Jiang, Ya-Bin Sun, Jianlu Wang, Shiyou Chen (陈时友)*, David Wei Zhang, and Peng Zhou(周鹏)*,Ultrafast non-volatile flash memory based on van der Waals heterostructures, (Nature Nanotechnology, 1-8, 2021). (通讯作者)

8. Huawei Chen, Xiaoyong Xue, Chunsen Liu, Jinbei Fang, Zhen Wang, Jianlu Wang, David Wei Zhang, Weida Hu (胡伟达)*, and Peng Zhou(周鹏)*, Logic gates based on neuristors made from two-dimensional materials, (Nature Electronics, 1-6, 2021) (通讯作者)

9. Yunfeng Chen, Yang Wang, Zhen Wang, Yue Gu, Yan Ye, Xuliang Chai, Jiafu Ye, Yan Chen, Runzhang Xie, Yi Zhou, Zhigao Hu, Qing Li, Lili Zhang, Fang Wang, Peng Wang, Jinshui Miao, Jianlu Wang, Xiaoshuang Chen, Wei Lu, Peng Zhou(周鹏)*, and Weida Hu (胡伟达)*, Unipolar barrier photodetectors based on van der Waals heterostructures, (Nature Electronics, 4, 357-363, 2021). (通讯作者)

10. Shuiyuan Wang, Lan Liu, Lurong Gan, Huawei Chen, Xiang Hou, Yi Ding, Shunli Ma, David Wei Zhang, and Peng Zhou(周鹏)*, Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing, (Nature Communications, 12, 1-9, 2021). (通讯作者)

11. Xiaohe Huang, Chunsen Liu, Zhaowu Tang, Senfeng Zeng, Liwei Liu, Xiang Hou, Huawei Chen, Jiayi Li, Yu-Gang Jiang, David Wei Zhang, and Peng Zhou(周鹏)*, High drive and low leakage current MBC FET with channel thickness 1.2nm/0.6nm, (IEEE International Electron Devices Meeting (IEDM), IEEE, 12.1. 1-12.1. 4, 2020). (通讯作者)

12. Chunsen Liu, Huawei Chen, Shuiyuan Wang, Qi Liu, Yu-Gang Jiang, David Wei Zhang, Ming Liu, and Peng Zhou(周鹏)*, Two-dimensional materials for next-generation computing technologies, (Nature Nanotechnology, 15, 545-557, 2020). (通讯作者)

13. Guangjian Wu, Bobo Tian , Peng Zhou(周鹏)*, Qi Liu , Chungang Duan, Shantao Zhang, Xiangjian Meng, Shiwei Wu , Weida Hu , Xinran Wang, Junhao Chu and Jianlu Wang(王建禄)*, Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains, (Nature Electronics, 3, 43-50, 2020). (通讯作者)

14. Shuiyuan Wang, Chunsheng Chen, Zhihao Yu, Yongli He, Xiaoyao Chen, Qing Wan, Yi Shi, David Wei Zhang, Hao Zhou, Xinran Wang(王欣然)*, and Peng Zhou(周鹏)*, A MoS2/PTCDA hybrid heterojunction synapse with efficient photoelectric dual modulation and versatility, (Advanced Materials, 31, 1806227, 2019). (通讯作者)

15. Chunsen Liu, Huawei Chen, Xiang Hou, Heng Zhang, Jun Han, Yu-Gang Jiang, Xiaoyang Zeng, David Wei Zhang(张卫)*, and Peng Zhou(周鹏)*, Small footprint transistor architecture for photoswitching logic and in situ memory, (Nature Nanotechnology, 14, 662-667, 2019). (通讯作者)

16. Qilin Hua, Huaqiang Wu(吴华强)*, Bin Gao(高滨)*, Meiran Zhao, Yujia Li, Xinyi Li, Xiang Hou, Meng-Fan (Marvin) Chang, Peng Zhou(周鹏)*, and He Qian, A threshold switching selector based on highly ordered Ag nanodots for X-point memory applications, (Advanced Science, 6, 1900024, 2019). (通讯作者)

17. Chunsen Liu, Xiao Yan, Xiongfei Song, Shijin Ding, David Wei Zhang(张卫)* and Peng Zhou(周鹏)*, A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications, (Nature Nanotechnology, 13, 404-410, 2018). (通讯作者)

18. Ziwen Wang, Zhongying Xue, Miao Zhang, Yongqiang Wang, Xiaoming Xie, Paul K. Chu, Peng Zhou(周鹏)*, Zengfeng Di(狄增峰)*, and Xi Wang, Germanium-assisted direct growth of graphene on arbitrary dielectric substrates for heating devices, (Small, 13, 1700929, 2017). (通信作者)

19. Enze Zhang, Weiyi Wang, Cheng Zhang, Yibo Jin, Guodong Zhu, Qingqing Sun, David Wei Zhang, Peng Zhou(周鹏)*, and Faxian Xiu(修发贤)*, Tunable charge-trap memory based on few-layer MoS2, (ACS Nano, 9, 612-619, 2015). (通信作者)

20. Qingqing Sun(孙清清)*, Jingjing Gu, Lin Chen, Peng Zhou(周鹏)*, Pengfei Wang, Shijin Ding, and David Wei Zhang, Controllable filament with electric field engineering for resistive switching uniformity, (IEEE Electron Device Letters, 32, 1167-1169, 2011). (通信作者)

21. X. Wu, P. Zhou(周鹏)*, J. Li *, L.Y. Chen, H. B. Lv, Y. Y. Lin, and T. A. Tang, Reproducible unipolar resistance switching in stoichiometric ZrO2 films, (Applied Physics Letters ,90, 183507, 2007). (通信作者)