研究方向：

集成电路新原理器件设计与先进CMOS工艺

新型存储器件与存算一体技术

柔性电子器件与可穿戴技术

集成电路先进互连与三维集成技术

教育背景：

复旦大学，微电子学与固体电子学，博士研究生

学术经历：

2019年11月-至今复旦大学微电子学院，教授

2014年10月-2019年11月复旦大学微电子学院，副研究员

2012年07月-2014年08月荷兰皇家飞利浦公司，研发经理

2010年07月-2010年11月德国弗劳恩霍夫研究所，访问学者

荣誉称号：

2021，国家重大人才工程“青年学者”

2021，复旦大学“五四奖章”

2020，复旦大学卓越2025人才

2020，上海市科学技术奖二等奖（2）

2019，上海市科技启明星

2016，上海市高校青年科研骨干培养“晨光计划”

主持承担项目：

国家重点研发计划“纳米前沿”青年科学家项目

国家科技重大专项（02专项）课题

国家自然科学基金重大研发项目

国家自然科学基金委青年项目

上海市科技行动计划项目

代表性论文：

[1]J. Meng, T. Wang, H. Zhu, L. Ji, W. Bao, P. Zhou, L. Chen（陈琳）, Q.-Q. Sun, and D. W. Zhang, “Integrated In-Sensor Computing Optoelectronic Device for Environment-Adaptable Artificial Retina Perception Application,” Nano Letters, 2021.

[2]C. Wang, H. Liu, L. Chen（陈琳）, H. Zhu, L. Ji, Q.-Q. Sun, and D. W. Zhang, “Ultralow-Power Synaptic Transistor Based on Wafer-Scale MoS2 Thin Film for Neuromorphic Application,” Ieee Electron Device Letters, vol. 42, no. 10, pp. 1555-1558, Oct, 2021.

[3]Y. Liu, Y. Cao, H. Zhu, L. Ji, L. Chen（陈琳）, Q. Sun, and D. W. Zhang, “HfZrOx-Based Ferroelectric Tunnel Junction With Crested Symmetric Band Structure Engineering,” Ieee Electron Device Letters, vol. 42, no. 9, pp. 1311-1314, Sep, 2021.

[4]Z.-Y. He, T.-Y. Wang, J.-L. Meng, H. Zhu, L. Ji, Q.-Q. Sun, L. Chen（陈琳）, and D. W. Zhang, “CMOS back-end compatible memristors for in situ digital and neuromorphic computing applications,” Materials Horizons, vol. 8, no. 12, pp. 3345-3355, Nov 29, 2021.

[5]T.-Y. Wang, J.-L. Meng, Q.-X. Li, Z.-Y. He, H. Zhu, L. Ji, Q.-Q. Sun, L. Chen（陈琳）, and D. W. Zhang, “Reconfigurable optoelectronic memristor for in-sensor computing applications,” Nano Energy, vol. 89, Nov, 2021.

[6]J. L. Meng, T. Y. Wang, Z. Y. He, L. Chen（陈琳）, H. Zhu, L. Ji, Q. Q. Sun, S. J. Ding, W. Z. Bao, P. Zhou, and D. W. Zhang, “Flexible boron nitride-based memristor for in situ digital and analogue neuromorphic computing applications,” Materials Horizons, vol. 8, no. 2, pp. 538-546, Feb, 2021.

[7]J. L. Meng, T. Y. Wang, L. Chen（陈琳）, Q. Q. Sun, H. Zhu, L. Ji, S. J. Ding, W. Z. Bao, P. Zhou, and D. W. Zhang, “Energy-efficient flexible photoelectric device with 2D/0D hybrid structure for bio-inspired artificial heterosynapse application,” Nano Energy, vol. 83, May, 2021.

[8]X. Xu, X. Zhou, T. Wang, X. Shi, Y. Liu, Y. Zuo, L. Xu, M. Wang, X. Hu, X. Yang, J. Chen, X. Yang, L. Chen（陈琳）, P. Chen, and H. Peng, “Robust DNA-Bridged Memristor for Textile Chips,” Angewandte Chemie-International Edition, vol. 59, no. 31, pp. 12762-12768, Jul 27, 2020.

[9]Y. Wang, Y. Yang, Z. He, H. Zhu, L. Chen（陈琳）, Q. Sun, and D. W. Zhang, “Laterally Coupled 2D MoS2 Synaptic Transistor With Ion Gating,” Ieee Electron Device Letters, vol. 41, no. 9, pp. 1424-1427, Sept, 2020.

[10]T.-Y. Wang, J.-L. Meng, M.-Y. Rao, Z.-Y. He, L. Chen（陈琳）, H. Zhu, Q.-Q. Sun, S.-J. Ding, W.-Z. Bao, P. Zhou, and D. W. Zhang, “Three-Dimensional Nanoscale Flexible Memristor Networks with Ultralow Power for Information Transmission and Processing Application,” Nano Letters, vol. 20, no. 6, pp. 4111-4120, Jun 10, 2020.

[11]T.-Y. Wang, J.-L. Meng, Z.-Y. He, L. Chen（陈琳）, H. Zhu, Q.-Q. Sun, S.-J. Ding, P. Zhou, and D. W. Zhang, “Room-temperature developed flexible biomemristor with ultralow switching voltage for array learning,” Nanoscale, vol. 12, no. 16, pp. 9116-9123, Apr 28, 2020.

[12]T.-Y. Wang, J.-L. Meng, Z.-Y. He, L. Chen（陈琳）, H. Zhu, Q.-Q. Sun, S.-J. Ding, P. Zhou, and D. W. Zhang, “Ultralow Power Wearable Heterosynapse with Photoelectric Synergistic Modulation,” Advanced Science, vol. 7, no. 8, Apr, 2020.

[13]H. Liu, L. Chen（陈琳）, H. Zhu, Q.-Q. Sun, S.-J. Ding, P. Zhou, and D. W. Zhang, “Atomic layer deposited 2D MoS2 atomic crystals: from material to circuit,” Nano Research, vol. 13, no. 6, pp. 1644-1650, Jun, 2020.

[14]Q. X. Li, T. Y. Wang, X. L. Wang, L. Chen（陈琳）, H. Zhu, X. H. Wu, Q. Q. Sun, and D. W. Zhang, “Flexible organic field-effect transistor arrays for wearable neuromorphic device applications,” Nanoscale, vol. 12, no. 45, pp. 23150-23158, Dec, 2020.

[15]Z. H. Gu, T. B. Zhang, J. L. Luo, Y. Wang, H. Liu, L. Chen（陈琳）, X. K. Liu, W. J. Yu, H. Zhu, Q. Q. Sun, and D. W. Zhang, “MoS2-on-AlN Enables High-Performance MoS2 Field-Effect Transistors through Strain Engineering,” Acs Applied Materials & Interfaces, vol. 12, no. 49, pp. 54972-54979, Dec, 2020.

[16]M. Zhang, H. Li, J. Xu, H. Zhu, L. Chen（陈琳）, Q. Sun, and D. W. Zhang, “High-Performance ReS2 FET for Optoelectronics and Flexible Electronics Applications,” Ieee Electron Device Letters, vol. 40, no. 1, pp. 123-126, Jan, 2019.

[17]T.-Y. Wang, J.-L. Meng, Z.-Y. He, L. Chen（陈琳）, H. Zhu, Q.-Q. Sun, S.-J. Ding, P. Zhou, and D. W. Zhang, “Fully transparent, flexible and waterproof synapses with pattern recognition in organic environments,” Nanoscale Horizons, vol. 4, no. 6, pp. 1293-1301, Nov 1, 2019.

[18]L.-J. Yu, T.-Y. Wang, L. Chen（陈琳）, H. Zhu, Q.-Q. Sun, S.-J. Ding, P. Zhou, and D. W. Zhang, “Stateful Logic Operations Implemented With Graphite Resistive Switching Memory,” Ieee Electron Device Letters, vol. 39, no. 4, pp. 607-609, Apr, 2018.

[19]T.-Y. Wang, Z.-Y. He, H. Liu, L. Chen（陈琳）,H. Zhu, Q.-Q. Sun, S.-J. Ding, P. Zhou, and D. W. Zhang, “Flexible Electronic Synapses for Face Recognition Application with Multimodulated Conductance States,” Acs Applied Materials & Interfaces, vol. 10, no. 43, pp. 37345-37352, Oct 31, 2018.

[20]S. Y. Jiang, Y. Yuan, X. Wang, L. Chen（陈琳）, H. Zhu, Q. Q. Sun, and D. W. Zhang, “A Semi-Floating Gate Transistor With Enhanced Embedded Tunneling Field-Effect Transistor,” Ieee Electron Device Letters, vol. 39, no. 10, pp. 1497-1499, Oct, 2018.

[21]L. Chen（陈琳）, T.-Y. Wang, Y.-W. Dai, M.-Y. Cha, H. Zhu, Q.-Q. Sun, S.-J. Ding, P. Zhou, L. Chua, and D. W. Zhang, “Ultra-low power Hf0.5Zr0.5O2 based ferroelectric tunnel junction synapses for hardware neural network applications,” Nanoscale, vol. 10, no. 33, pp. 15826-15833, Sep 7, 2018.

[22]J. Xu, L. Chen（陈琳）, Y.-W. Dai, Q. Cao, Q.-Q. Sun, S.-J. Ding, H. Zhu, and D. W. Zhang, “A two-dimensional semiconductor transistor with boosted gate control and sensing ability,” Science Advances, vol. 3, no. 5, May, 2017.

[23]M.-L. Shi, L. Chen（陈琳）, T.-B. Zhang, J. Xu, H. Zhu, Q.-Q. Sun, and D. W. Zhang, “Top-Down Integration of Molybdenum Disulfide Transistors with Wafer-Scale Uniformity and Layer Controllability,” Small, vol. 13, no. 35, Sep 20, 2017.

[24]Q. Cao, Y.-W. Dai, J. Xu, L. Chen（陈琳）, H. Zhu, Q.-Q. Sun, and D. W. Zhang, “Realizing Stable p-Type Transporting in Two-Dimensional WS2 Films,” Acs Applied Materials & Interfaces, vol. 9, no. 21, pp. 18215-18221, May 31, 2017.

[25]D.-T. Wang, Y.-W. Dai, J. Xu, L. Chen（陈琳）, Q.-Q. Sun, P. Zhou, P.-F. Wang, S.-J. Ding, and D. W. Zhang, “Resistive Switching and Synaptic Behaviors of TaN/Al2O3/ZnO/ITO Flexible Devices With Embedded Ag Nanoparticles,” Ieee Electron Device Letters, vol. 37, no. 7, pp. 878-881, Jul, 2016.

[26]Y.-W. Dai, L. Chen（陈琳）, W. Yang, Q.-Q. Sun, P. Zhou, P.-F. Wang, S.-J. Ding, D. W. Zhang, and F. Xiao, “Complementary Resistive Switching in Flexible RRAM Devices,” Ieee Electron Device Letters, vol. 35, no. 9, pp. 915-917, Sep, 2014.

[27]Q.-Q. Sun, J.-J. Gu, L. Chen（陈琳）, P. Zhou, P.-F. Wang, S.-J. Ding, and D. W. Zhang, “Controllable Filament With Electric Field Engineering for Resistive Switching Uniformity,” Ieee Electron Device Letters, vol. 32, no. 9, pp. 1167-1169, Sep, 2011.

[28]L. Chen（陈琳）, H.-Y. Gou, Q.-Q. Sun, P. Zhou, H.-L. Lu, P.-F. Wang, S.-J. Ding, and D. Zhang, “Enhancement of Resistive Switching Characteristics in Al2O3-Based RRAM With Embedded Ruthenium Nanocrystals,” Ieee Electron Device Letters, vol. 32, no. 6, pp. 794-796, Jun, 2011.

[29] L. Chen（陈琳）, Y. Xu, Q.-Q. Sun, P. Zhou, P.-F. Wang, S.-J. Ding, and D. W. Zhang, “Atomic-Layer-Deposited HfLaO-Based Resistive Switching Memories With Superior Performance,” Ieee Electron Device Letters, vol. 31, no. 11, pp. 1296-1298, Nov, 2010.

[30] L. Chen（陈琳）, Y. Xu, Q.-Q. Sun, H. Liu, J.-J. Gu, S.-J. Ding, and D. W. Zhang, “Highly Uniform Bipolar Resistive Switching With Al2O3 Buffer Layer in Robust NbAlO-Based RRAM,” Ieee Electron Device Letters, vol. 31, no. 4, pp. 356-358, Apr, 2010.