无线集成电路与系统实验室（WiCAS）
Wireless Integrated Circuit and System Lab
MS/PhD/Postdoc positions open！
现招收品学兼优、勇于创新的硕士生、博士生以及博士后。
欢迎有志于从事射频／模拟／数字IC设计、天线、智能系统及算法研究的同学加入。
实验室为学生提供与工业界接轨的设计理念，开放包容的科研环境和帮助优秀学生提供工业界实习机会。
课题组研究方向：
先进CMOS工艺上的高性能收发机架构与芯片设计
应用于智能传感器和下一代通讯的毫米波集成电路与系统
智能物联网和可穿戴等新型应用驱动的无线SoC芯片与算法一体化微系统
教育背景
美国加州大学圣芭芭拉分校，电子与计算机工程，博士
美国加州大学圣芭芭拉分校，经济学，硕士
上海复旦大学，电子工程，学士
工作经历：
2015年-至今复旦大学微电子学院，教授级研究员，博士生导师
2005年-2015年英特尔公司 (Intel Corp) ，英特尔研究院（Intel Labs）主管研究科学家
主要成果及荣誉
IEEE 高级会员
已发表在包含行业顶级期刊ISSCC和JSSC在内的~50篇论文：
无线集成电路：6 ISSCC; 7 JSSC; 1 TCASI; 2 RFIC; 1 CICC; 2 VLSI-C; 2 ESSCIRC; 1 RFID
微波集成电路：1 TMTT; 3 IMS; 2 CSICS; 6 MWCL
微波器件：2 EDL; 1 VLSI-T; 1 DRC
系统算法：1 ACCESS
13项美国专利
2篇英文著作
近期国际学术重要职务
IEEE 国际固态电路会议 ISSCC 技术评审委员
IEEE 射频集成电路国际会议 RFIC 指导委员/技术评审委员
IEEE 国际无线会议 IWS 技术评审委员
IEEE MWCL 副主编 2019至今
IEEE JSSC 特邀编辑 Guest Editor 2019-2020
行业研发经历
1.高集成度智能毫米波传感器SoC
·主导实现集成毫米波收发机、超宽带调频锁相环、高精度ADC、信号处理加速器、电源管理等关键功能的单芯片智能毫米波传感器SoC。广泛应用于自动驾驶、无人机、机器人、智能家居等多样化智能物联网领域。
2.超低功耗SoC系统开发项目
·带领团队开发了业界首枚14纳米CMOS无线低功耗WiFi SoC芯片，应用于搭建无线传感网、物联网和可穿戴设备。
3.先进CMOS工艺下高性能无线收发机的设计
·超过15年包括收发机前端的无线射频元件，无线系统开发及射频电路数字化创新。经历从90纳米到14纳米的无线系统开发，开发出用于低功耗和低成本无线系统的颠覆性的无线收发机的架构，并应用于英特尔无线通讯产品中。
4.高性能CMOS数字射频功率放大器（PA）
·领导并研发了多款高性能CMOS功率放大器。其中首创的outphasing和dynamic power control数字式功率放大器，成果证明了用数字方法实现射频的射频功率放大器，性能可以超越传统的设计方式。基于32纳米CMOS工艺研发的两款功率放大器，性能超越其他已同时期发布的设计，成为32纳米 CMOS功率放大器性能标杆。
5.全集成基于高性能GaN HEMT的微波电路（MMIC）
·净化间微波器件工艺开发经验。独立完成从微波器件制造到电路设计测试流程。
·开发出基于GaN HEMT的微波集成电路加工工艺，并对此工艺的有源器件和被动器件建立模型，设计开发包括PA，VCO和LNA在内的高性能微波电路。
·首创了可集成在化合物半导体上的可调制铁电材料器件制造工艺，极大减小微波元件的尺寸，并设计高性能自适应的微波电路。
近期论文／报告选摘
1.X. Luo, H. J. Qian, Y. Yin, Hongtao Xu, “Empowering Multifunction: Digital Power Amplifiers, the Last RF Frontier of the Analog and Digital Kingdoms”, IEEE Microwave Magazine, 2020, 21(12), 47 – 67
2.Y. Yin, L. Xiong, Y. Zhu, B. Chen, H. Min, and Hongtao Xu, “A Broadband Switched-Transformer Digital Power Amplifier for Deep Back-Off Efficiency Enhancement”, IEEE Journal of Solid-State Circuits (JSSC), 2020, 55(11), 2997 – 3008
3.B. Chen, W. Luo, F. Wang, Y. Lin, N. Yan, and Hongtao Xu, “A 22.5–31.2-GHz Continuously Tuning Frequency Synthesizer With 8.7-GHz Chirp for FMCW Applications,” IEEE Microwave and Wireless Components Letters (MWCL), 2020, 30(9), 904 - 907
4.P. Wang, J. Lin, F. Wang, J. Xiu, Y. Lin, N. Yan, and Hongtao Xu, “A Gesture Air-Writing Tracking Method that Uses 24 GHz SIMO Radar SoC,” IEEE ACCESS, 2020, 152728-152741
5.D. Zheng, Y. Yin, Y. Zhu, L. Xiong, Y. Li, N. Yan, and Hongtao Xu, “A 15b Quadrature Digital Power Amplifier with Transformer-Based Complex-Domain Power-Efficiency Enhancement”, 2020 IEEE International Solid-State Circuits Conference (ISSCC), 2020, 370-371
6.T. Li, L Xiong, Y. Yin, Y. Liu, H. Min, N. Yan, and Hongtao Xu, “A Wideband Digital Polar Transmitter with Integrated Capacitor-DAC-Based Constant-Envelope Digital-to-Phase Converter”, 2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2019, June 2-4
7.Y. Yin, L. Xiong, Y. Zhu, B. Chen, H. Min, and Hongtao Xu, “A Compact Dual-Band Digital Polar Doherty Power Amplifier Using Parallel-Combining Transformer”, IEEE Journal of Solid-State Circuits (JSSC), 2019, 54(6), 1575-1585
8.W. Luo, Y. Yin, L. Xiong, T. Li, and Hongtao Xu, “Nonlinear Analytical Model for Switched-Capacitor Class-D RF Power Amplifiers”, IEEE Transactions on Circuits and Systems I: Regular Papers (TCAS-I), 2019, 66(6), 2309-2321
9.Y. Yin, Y. Zhu, L. Xiong, W. Luo, B. Chen, T. Li, N. Yan, and Hongtao Xu, “A Compact Transformer-Combined Polar/Quadrature Reconfigurable Digital Power Amplifier in 28nm Logic LP CMOS”, IEEE Journal of Solid-State Circuits (JSSC invited), 2019, 54(3), 709 - 719
10.L. Xiong, T. Li, Y. Yin, H. Min, N. Yan, and Hongtao Xu, “A Broadband Switched-Transformer Digital Power Amplifier for Deep Back-Off Efficiency Enhancement”, 2019 IEEE International Solid-State Circuits Conference (ISSCC), 2019, 76-77
11.T. Li, Y. Yin, Y. Zhu, L. Xiong, Y. Liu, N. Yan, H. Min and Hongtao Xu, “A wideband efficiency-enhanced Class-G digital power amplifier for IoT applications,” IEEE Microwave and Wireless Components Letters (MWCL), 2018, 28(8), 714 – 716
12.Y. Zhu, L. Xiong, Y. Yin, W. Luo, B. Chen, T. Li, Hongtao Xu, “A Compact 2.4GHz Polar/Quadrature Reconfigurable Digital Power Amplifier in 28nm Logic LP CMOS”, 2018 IEEE Custom Integrated Circuits Conference (CICC), 2018, Apr 8-11 (Best Student Paper final list).
13.Y. Yin, L. Xiong, Y. Zhu, B. Chen, H. Min, Hongtao Xu, “A Compact Dual-Band Digital Doherty Power Amplifier Using Parallel- Combining Transformer for Cellular NB-IoT Applications”, 2018 IEEE International Solid-State Circuits Conference (ISSCC), 2018, 408-410
14.P. Madoglio, Hongtao Xu, K. Chandrashekar et al., “A 2.4GHz WLAN Digital Polar Transmitter with Synthesized Digital-to-Time Converter in 14nm Trigate/FinFET Technology for IoT and Wearable Applications”, 2017 IEEE International Solid-State Circuits Conference (ISSCC), 2017, 226- 227
15.A. Ravi, P. Madoglio, Hongtao Xu et al., “A 2.4-GHz 20–40-MHz Channel WLAN Digital Outphasing Transmitter Utilizing a Delay-Based Wideband Phase Modulator in 32-nm CMOS”, IEEE Journal of Solid-State Circuits (JSSC), 2012, 47(12), 3184- 3196
16.W. Tai, Hongtao Xu, Ravi, A. et al., “A Transformer-Combined 31.5 dBm Outphasing Power Amplifier in 45 nm LP CMOS With Dynamic Power Control for Back-Off Power Efficiency Enhancement”, IEEE Journal of Solid-State Circuits (JSSC), 2012, 47(7), 1646- 1658
17.P. Madoglio, A. Ravi, Hongtao Xu et al., “A 20dBm 2.4GHz digital outphasing transmitter for WLAN application in 32nm CMOS”, 2012 IEEE International Solid-State Circuits Conference (ISSCC), 2012, 168- 170
18.W. Tai, Hongtao Xu, A. Ravi et al., “A 31.5dBm Outphasing Class-D Power Amplifier in 45nm CMOS with Back-Off Efficiency Enhancement by Dynamic Power Control”. 2011 European Solid-State Circuits Conference (ESSCIRC), 2011, 131- 134
19.Hongtao Xu, Y. Palaskas, A. Ravi et al., “A Flip-Chip-Packaged 25.3 dBm Class-D Outphasing Power Amplifier in 32 nm CMOS for WLAN Application”, IEEE Journal of Solid-State Circuits (JSSC invited), 46(7), 2011, 1596 – 1605
20.Y. Tan, Hongtao Xu, M.A. El-tanani et al., “A flip-chip-packaged 1.8V 28dBm class-AB power amplifier with shielded concentric transformers in 32nm SoC CMOS”, 2011 IEEE International Solid-State Circuits Conference (ISSCC), 2011, 426 – 428
21.Hongtao Xu, Y. Palaskas, A. Ravi et al., A highly linear 25dBm outphasing power amplifier in 32nm CMOS for WLAN application”, 2010 European Solid-State Circuits Conference (ESSCIRC), 2010, 306 – 309
22.Hongtao Xu, Y. Palaskas, A. Ravi et al., A 28.1dBm class-D outphasing power amplifier in 45nm LP digital CMOS, 2009 Symposium on VLSI Circuits (VLSI-C), 2009, 206 - 207
