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黄大鸣

教授博士生导师

电话65654796

邮箱dmhuang@fudan.edu.cn

地址复旦大学邯郸校区微电子楼304室

研究所微纳电子器件研究所

研究方向:

半导体电子器件的小型化和可靠性

半导体纳米材料和器件结构的特性表征

半导体异质结构和低维量子体系的光电特性


教育背景:

1989年12月美国伊利诺大学(UIUC)电机系(ECE),博士

1985年10月美国伊利诺大学(UIUC)电机系(ECE),硕士

1982年07月复旦大学物理系半导体专业,学士


学术经历:

2013年04月-至今复旦大学微电子学院,教授,博士生导师

2005年05月-2013年04月复旦大学信息科学与工程学院,教授,博士生导师

2000年11月–2002年11月美国弗吉尼亚联邦大学(VCU)电机系(ECE),访问学者

1991年06月-2005年05月复旦大学物理系,副教授(1993年),教授(1995年),博士生导师(1996年)

1989年12月-1991年05月美国南佛罗里达大学(USF)物理系,博士后


部分论著目录:

S. T. Bu, D. M. Huang, G. F. Jiao, H. Y. Yu, and M. F. Li, “Low frequency noise in tunneling field effect transistors”, Solid State Electronics Vol. 137, pp. 95-101, Nov. 2017.

H. W. Yuan, H. Shen, J. J. Li, J. H. Shao, D. M. Huang, Y. F. Chen, P. F. Wang, S. J. Ding, A. Chin, and M. F. Li, “PBTI Investigation of MoS2 n-MOSFET with Al2O3 Gate Dielectric”, IEEE Electron Device Letters, vol. 38, no. 5, pp. 677-680,2017.

H. W. Yuan, H. Shen, J. J. Li, J. H. Shao, D. M. Huang, Y. F. Chen, P. F. Wang, S. J. Ding, W. J. Liu, A. Chin, and M. F. Li, “Investigation of Traps at MoS2/Al2O3 Interface in nMOSFETs by Low-Frequency Noise”, IEEE Electron Device Letters, vol. 37, no. 4, pp. 516-518, 2016.

D. Y. Lu, Y. D. Zhao, T. X. Anh, Y. H. Yu, D. M. Huang, Y. Y. Lin, S. J. Ding, P. F. Wang, and M. F. Li, “Investigations of Conduction Mechanisms of the Self-Rectifying n+Si-HfO2-Ni RRAM Devices”, IEEE Transactions on Electron Devices,vol. 61, no. 7, pp. 2294-2301, 2014.

Y. D. Hu, S. W. Li, G. F. Jiao, Y. Q. Wu, D. M. Huang, P. D. Ye, and M. F. Li, “Quasi-Ballistic Transport and Channel Electron Effective Mobility in InGaAs/Al2O3 n-FinFETs”, IEEE Transactions on Nanotechnology,vol. 12, no. 5, pp. 806 -809, 2013.

D. Huang, C. J. Yao, D. H. Shi, and M. F. Li, “An Empirical Model for Static I-V Characteristics of Double Gate Tunneling Field Effect Transistor”, Proc. 2013 10th IEEE International Conference on ASIC (ASICON), pp. 519-522, 2013.

J. Peng, G. F. Jiao, D. M. Huang, and M. F. Li, “A Reliability Model for CMOS Circuit Based on Device Degradation”, IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Proceedings, pp. 342-344, 2012.

G. F. Jiao, C. J. Yao, Y. Xuan, D. M. Huang, P. D. Ye, and M. F. Li, “Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With Al2O3 Gate Dielectric Under PBTI Stress”, IEEE Transaction on Electron Devices,vol. 59, no. 6, pp. 1661-1667, 2012.

G. F. Jiao, W. Cao, Y. Xuan, D. M. Huang, P. D. Ye, M. F. Li, “Positive Bias Temperature Instability Degradation of InGaAs n-MOSFETs with Al2O3 Gate Dielectric”, in IEDM tech. Dig., 2011, pp. 606-609.

W. Cao, C. J. Yao, G. F. Jiao, D. M. Huang, H. Y. Yu, and M. F. Li, “Improvement in Reliability of Tunneling Field Effect Transistor with PNINStructure,” IEEE Transaction on Electron Devices,vol. 58, pp. 2122-2126, 2011.

W. Cao, C. Shen, S. Q. Cheng, D. M. Huang, H. Y. Yu, N. Singh, G. Q. Lo, D. L. Kwong, and M. F. Li, “Gate Tunneling in Nano-Wire MOSFETs,” IEEE Electron Device Letters, vol. 32, no. 4, pp. 461-463, 2011.

X. Y. Huang, G. F. Jiao, W. Cao, D. M. Huang, H. Y. Yu, Z. X. Chen, N. Singh, G. Q. Lo, D. L. Kwong, and M. F. Li, “Effect of Interface-Traps and Oxide-Charge on Drain Current Degradation in Tunneling Field-Effect Transistors”, IEEE Electron Device Letters, vol. 31, pp. 779-781, 2010.

G. F. Jiao, Z. X. Chen, H. Y. Yu, X. Y. Huang, D. M. Huang, N. Singh, G. Q. Lo, D. L. Kwong, M. F. Li, “Experimental Studies of Reliability Issues in Tunneling Field-Effect Transistors”, IEEE Electron Device Letters, vol. 31, pp. 396-398, 2010.

G. F. Jiao, Z. X. Chen, H. Y. Yu, X. Y. Huang, D. M. Huang, N. Singh, G. Q. Lo, D. L. Kwong, M. F. Li, “New Degradation Mechanisms and Reliability Performance in Tunneling Field Effect Transistors”, in IEDM tech. Dig., 2009, pp. 741-744.

W. J. Liu, D. M. Huang, Q. Q. Sun, C. C. Liao, L. F. Zhang, Z. H. Gan, W. Wong, and M. F. Li, “Studies of NBTI in pMOSFETs with Thermal and Plasma Nitrided SiON Gate Oxides by OFIT and FPM Methods”, in Proc. Int. Reliab. Phys. Symp., 2009, pp. 964-968.

D. M. Huang, W. J. Liu, Z. Y. Liu, C. C. Liao, L. F. Zhang, Z. H. Gan, W. Wong, and M. F. Li, “A Modified Charge Pumping Method for the Characterization of Interface Trap Generation in MOSFETs”, IEEE Trans. on Electron Devices vol. 56, pp. 267-273, 2009.

Z.Y. Liu, D. M. Huang, W. J. Liu, C. C. Liao, L. F. Zhang, Z. H. Gan, W. Wong, and M. F. Li, “Comprehensive Studies of BTI Degradations in SiON Gate Dielectric CMOS Transistors by New Measurement Techniques”, in Proc. Int. Reliab. Phys. Symp., 2008,pp733-734.

M. F. Li, D. Huang, C. Shen, T. Yang, W. J. Liu, and Z. Y. Liu, “Understand NBTI Mechanism by Developing Novel Measurement Techniques”, IEEE Trans.on Device and Materials Reliability, vol. 8, pp. 62-71, 2008.

W. J. Liu, Z. Y. Liu, D. M. Huang, C. C. Liao, L. F. Zhang, Z. H. Gan, W. Wong, C. Shen, and M. F. Li, “On-The-Fly Interface Trap Measurement and Its Impact on the Understanding of NBTI Mechanism for p-MOSFETs with SiON Gate Dielectric”, in IEDM tech. Dig., 2007, pp. 813-816.

盛箎 蒋最敏 陆昉 黄大鸣,硅锗超晶格及低维量子结构,上海科学技术出版社,2004. (Book)

D. Huang, M. A. Reshchikov, and H. Morkoç, “Growth, structures, and optical properties of III-nitride quantum dots”, in: Quantum Dots, Eds. E. Borovitskaya and M. S. Shur, World Scientific, 2002. (Book Chapter,Review Article)