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周鹏

副院长教授博士生导师

电话65642198

邮箱pengzhou@fudan.edu.cn

地址复旦大学邯郸校区微电子学楼401室

研究所微纳电子器件研究所

研究方向:

新型二维层状半导体电子器件与特性研究

下一代CMOS兼容非易失存储器研究


教育背景:

复旦大学,物理学,博士


学术经历:

2013年12月-至今复旦大学,微电子学院,教授

2008年05月-2013年12月复旦大学,微电子学院,副研究员

2006年08月-2007年07月韩国,首尔国立大学,访问学者

2005年07月-2008年04月复旦大学,微电子学院,助理研究员

2000年07月-2005年06月复旦大学,信息科学与工程学院

1996年07月-2000年06月复旦大学,物理学系


荣誉称号:

上海市青年科技杰出贡献奖,2020

国家杰出青年科学基金获得者,2019

上海市曙光学者,2018

科技部中青年领军人才,2018

国家自然基金委优秀青年,2016

上海市科技启明星,2013

复旦大学卓学人才


代表性论文:

Chunsen Liu, Xiao Yan, Xiongfei Song, Shijin Ding, David Wei Zhang and Peng Zhou*,A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications,Nature Nanotechnology, Apr.9,2018. (第一作者&通讯作者)

Huawei Chen, Yantao Chen, Heng Zhang, David Wei Zhang, Peng Zhou,* and Jia Huang, Suspended SnS2 layers by light assistance for ultrasensitive ammonia detection at room temperature,Advanced Functional Materials, 2018,1801035 (通讯作者)

Xiao Yan, David Wei Zhang,Chunsen Liu, Wenzhong Bao, Shuiyuan Wang, Shijin Ding Gengfeng Zheng and Peng Zhou* , High performance amplifier element realization via MoS2/GaTe heterostructures, (Advanced Science, 1700830, 2018). (通信作者)

Huawei Chen, Jingyu Li, Xiaozhang Chen, David Wei Zhang and Peng Zhou*, Dramatic switching behavior in suspended MoS2 field-effect transistors, (Semiconductor science and technology, 33,024001,2018). (通信作者)

Chao Li, Xiao Yan, Wenzhong Bao, Shijin Ding,  David Wei Zhang and Peng Zhou*, Low sub-threshold swing realization with contacts of graphene/h-BN/MoS2 heterostructure in MoS2 transistors, (Applied Physics Letters 111, 193502, 2017) (通信作者)

Chao Li, Xiao Yan, Xiongfei Song, Wenzhong Bao, Shijin Ding, David Wei Zhang and Peng Zhou*, WSe2/MoS2 and MoTe2/SnSe2 van der Waals heterostructure transistors with different alignment(Nanotechnology,28,415201, 2017)

Xiongfei Song, Zhongxun Guo, Qiaochu Zhang, Peng Zhou*, Wengzhong Bao* and David Wei Zhang, Progress of large-scale synthesis and electronic device application of two-dimensional transition metal dichalcogenides, (Small, 1700098, 2017). (通信作者,邀请综述)

Xiao Yan, Chunsen Liu, Chao Li, Wengzhong Bao, Shijin Ding, David Wei Zhang and Peng Zhou*, Tunable SnSe2/Wse2 heterostructure tunneling field effect transitor, (Small, 1701478, 2017). (通信作者)

Ziwen Wang, Zhongying Xue, Miao Zhang, Yongqiang Wang, Xiaoming Xie, Paul K.Chu, Peng Zhou* Zengfeng Di*, and Xi Wang, Germanium-assisted direct growth of graphene on arbitrary dielectric substrates for heating devices, (Small, 1700929, 2017). (通信作者)

Chunsen Liu, Xiao Yan, Enze Zhang, Xiongfei Song, Qingqing Sun, Shijin Ding, Wengzhong Bao, Faxian Xiu*, Peng Zhou* and David Wei Zhang, Various and tunable transport properties of WSe2 transistor formed by metal contacts, (Small, 1604128, 2017). (通信作者)

Chunsen Liu, Xiao Yan, Jianlu Wang*, Shijin Ding, Peng Zhou* and David Wei Zhang*, Eliminating over-erase behavior by designing energy band in high speed charge-trap memory based on WSe2, (Small, 1604128, 2017). (通信作者)

Yawei Dai, Wenzhong Bao, Linfeng Hu, Chunsen Liu, Lin Chen, Qingqing Sun, Shijin Ding, Peng Zhou* and David Wei Zhang, Forming free and ultralow power erase operation in atomically crystal TiO2 resistive switching, (2D Materials, 4, 2017) doi.org/10.1088/2053-1583. (通信作者)

E. Zhang, P. Wang, Z. Li, H. Wang, C. Song, C. Huang, Z.G. Chen, L. Yang, K. Zhang, S. Lu, W.Y. Wang, S. Liu, H. Fang, X. Zhou, H. Yan, J. Zou, X.G. Wan, P. Zhou*, W. Hu, and F.X. Xiu, Tunable ambipolar polarization-sensitive photodetectors based on high-anisotropy ReSe2 nanosheets (ACS Nano, 10, 8067 -8077,2016). (通信作者)

Peng Zhou*, Xiongfei Song, Xiao Yan, Chunsen Liu,Lin Chen, Qingqing Sun, and David Wei Zhang, Controlling the work function of molybdenum disulfide by in situ metal deposition(Nanotechnology,27,344002, 2016)

X. Yuan, L.Tang, S.S. Liu, P. Wang, Z.G. Chen, C. Zhang, Y. W. Liu, J. Zou, Peng Zhou*,W. Hu, F.X. Xiu,Arrayed van der Waals vertical heterostructures based on 2D GaSe grown by molecular beam epitaxy,(Nano Letters,2015,15(5):3571-3577). (通信作者)(ESI 高引)

E. Zhang, Y. Jin, X. Yuan, W.Y. Wang, C. Zhang, L. Tang, S.S. Liu, Peng Zhou*,W. Hu, F.X. Xiu,ReS2-based field-effect transistors and photodetectors, (Advanced Functional Materials,25(26):4076-4082,2015). (通信作者)

Enze Zhang, Weiyi Wang, Cheng Zhang, Yibo Jin, Guodong Zhu, Qingqing Sun, David Wei Zhang, Peng Zhou,* and Faxian Xiu, Tunable charge-trap memory based on few-layer MoS2, (ACS Nano,9,612-619 ,2015). (通信作者)

Peng Zhou*, Songbo Yang, Qingqing Sun, Lin Chen, Pengfei Wang, Shijin Ding & David Wei Zhang, Direct deposition of uniform high-k dielectrics on graphene,(Scientific Reports ,4(6448),2014). (通信作者)

Songbo Yang, Peng Zhou,* Lin Chen, Qingqing Sun, Pengfei Wang, Shijin Ding, Anquan Jiang and David Wei Zhang, Direct observation of the work function evolution of graphene-two-dimensional metal contacts, (Journal of Materials Chemistry C , 2,8042—8046,2014). (通信作者)

Yan Shen, Songbo Yang , Peng Zhou*, Qingqing Sun, Pengfei Wang, Li Wan,Jing Li, Liangyao Chen, Xianbao Wang, Shijin Ding, David Wei Zhang, Evolution of the band-gap and optical properties of graphene oxide with controllable reduction level,(Carbon,62,157-164,2013). (通信作者)

Peng Zhou, Hong-Qiang Wei, Qing-Qing Sun, Peng-Fei Wang, Shi-Jin Ding, An-Quan Jiang and David Wei Zhang, The tunable electrical properties of graphene nano-bridges, (Journal of Materials Chemistry C , 2,2548-2552,2013). (通信作者)

Peng Zhou, Li Ye, Qing-Qing Sun, Peng-Fei Wang, An-Quan Jiang, Shi-Jin Ding, David Wei Zhang, Effect of concurrent joule heat and charge trapping on RESET for NbAlO fabricated by atomic layer deposition ,(Nanoscale Research Letters ,8, (2013), 91(1-5)

Peng Zhou, Li Ye, Qing-Qing Sun, Lin Chen, Shi-Jin Ding, An-Quan Jiang, David Wei Zhang, The temperature dependence in nano-resistive switching of HfAlO (IEEE Transactions on Nanotechnology, 11, 1059, 2012)

Lu-Hao Wang, Wen Yang, Qing-Qing Sun, Peng Zhou, Hong-Liang Lu, Shi-Jin Ding,and David Wei Zhang, The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories(Applied Physics Letters, 100, 063509, 2012) (通信作者)

Shen Y, Zhou P*, Sun Q. Q, Wan L., Li J., Chen L. Y., Zhang D. Wand Wang X.B, Optical investigation of reduced graphene oxide by spectroscopic ellipsometry and the band-gap tuning (Applied Physics Letters, 99, 141911, 2011) (通信作者)

Sun Q.Q , Gu J. J, Chen L, Zhou P*, Wang P. F, Ding S.J, and Zhang D.W, Controllable filament with electric field engineering for resistive switching Uniformity (IEEE Electron Device Letters. 32,1167-1169, 2011) (通信作者)

Wan H. J, Zhou P*, Ye L, Lin Y. Y, Tang T. A, Wu H. M, and Chi M. H, In situ observation of compliance-current overshoot and its effect on resistive switching (IEEE Electron Device Letters. 31, 246-248, 2010) (通信作者)

Zhou P, Li J ,Chen L.Y , Gao C , Lin Y , Tang T.A, Resistance switching study of stoichiometric ZrO2 films for non-volatile memory application (Thin Solid Films 518,5652-5655,2010)

Zhou P ,Yin M, Wan H J,Lv H. B, Tang T. A and Lin Y. Y, Role of TaON interface for CuxO resistive switching memory based on a combined model(Applied Physics Letters, 94, 053510, 2009)

Chen Y. R, Zhou P*, Li J and Chen L. Y, Electrical levels of defect investigation of ZrO2 thin film by spectroscopic ellipsometry, (Journal of Vacuum Science &Technology B, 27,1030-1034, 2009)(通信作者)

Yin M, Zhou P*, Lv H. B, Xu J, Song Y. L, Fu X. F, Tang T. A, Chen B. A and Lin Y. Y, Improvement of resistive switching in CuxO using new RESET mode (IEEE Electron Device Letters. 29, 681-683, 2008) (通信作者)

Zhou P, Lv H. B, Yin M., Tang L, Song Y. L, Tang T. A, Lin Y. Y, Bao A, A. Wu, S. Cai, H. Wu, C. Liang, and M. H. Chi,Performance improvement of CuOx with gradual oxygen concentration for nonvolatile memory application (Journal of Vacuum Science & Technology B, 26,1030-1033, 2008)

Lv Hang-Bing, Zhou Peng*, Fu Xiu-Feng, Yin Ming, Song Ya-Li,Tang Li, Tang Ting-Ao, Lin Yin-Yin, Polarity-free resistive switching characteristics of CuxO films for non-volatile memory applications (Chin. Phys. Lett. 25, 1087-1090, 2008) (通信作者)

Wu X, Zhou P*, Li J, Chen L.Y, Lv H.B, Lin Y.Y, Tang T.A, Reproducible unipolar resistance switching in stoichiometric ZrO2 films (Applied Physics Letters ,90 (18): 183507, 2007) (通信作者)

Zhou P, Shin Y. C, Choi B. J, Choi S, Hwang C. S, Lin Y. Y, Lv H. B, Yan X. J, Tang T. A, Chen L. Y, and Chen B. M, Dynamic threshold switching behavior of Ge2Sb2Te5 and Sb-doped Ge2Sb2Te5 thin films using scanning electrical nanoprobe (Electrochemical and Solid-State Letters, 10, H281-H283, 2007)

Zhou P, You G. J, Li J, Wang S.Y, Qian S.X, Chen L.Y, Annealing effect of linear and nonlinear optical properties of Ag:Bi2O3 nanocomposite films, (Optics Express,13(5), 1508-1514, 2005)

Zhou P, You G.J, Li Y.G., Han T, Li J, Wang S.Y, Chen L.Y, Liu Y and Qian S.X,Linear and ultrafast nonlinear optical response of Ag : Bi2O3 composite films (Applied Physics Letters, 83 (19): 3876-3878, 2003)