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徐鸿涛

研究员博士生导师

电话51355075

邮箱hongtao@fudan.edu.cn

地址复旦大学张江校区微分析楼B309室

研究所射频与混合信号集成电路设计研究所

无线集成电路与系统实验室(WiCAS)
Wireless Integrated Circuit and System Lab


MS/PhD/Postdoc positions open!

  • 现招收品学兼优、勇于创新的硕士生、博士生以及博士后。

  • 欢迎有志于从事射频/模拟/数字IC设计、天线、智能系统及算法研究的同学加入。

  • 实验室为学生提供与工业界接轨的设计理念,开放包容的科研环境和帮助优秀学生提供工业界实习机会。


课题组研究方向:

  • 先进CMOS工艺上的高性能收发机架构与芯片设计

  • 应用于智能传感器和下一代通讯的毫米波集成电路与系统

  • 智能物联网和可穿戴等新型应用驱动的无线SoC芯片与算法一体化微系统


教育背景

  • 美国加州大学圣芭芭拉分校,电子与计算机工程,博士

  • 美国加州大学圣芭芭拉分校,经济学,硕士

  • 上海复旦大学,电子工程,学士


工作经历:

2015年-至今复旦大学微电子学院,教授级研究员,博士生导师

2005年-2015年英特尔公司 (Intel Corp) ,英特尔研究院(Intel Labs)主管研究科学家


主要成果及荣誉
IEEE 高级会员
已发表在包含行业顶级期刊ISSCC和JSSC在内的~50篇论文:
 无线集成电路:6 ISSCC; 7 JSSC; 1 TCASI; 2 RFIC; 1 CICC; 2 VLSI-C; 2 ESSCIRC; 1 RFID
 微波集成电路:1 TMTT; 3 IMS; 2 CSICS; 6 MWCL
 微波器件:2 EDL; 1 VLSI-T; 1 DRC

 系统算法:1 ACCESS

13项美国专利

2篇英文著作


近期国际学术重要职务

 IEEE 国际固态电路会议 ISSCC 技术评审委员

 IEEE 射频集成电路国际会议 RFIC 指导委员/技术评审委员

 IEEE 国际无线会议 IWS 技术评审委员

 IEEE MWCL 副主编 2019至今

 IEEE JSSC 特邀编辑 Guest Editor 2019-2020


行业研发经历

1.高集成度智能毫米波传感器SoC

 ·主导实现集成毫米波收发机、超宽带调频锁相环、高精度ADC、信号处理加速器、电源管理等关键功能的单芯片智能毫米波传感器SoC。广泛应用于自动驾驶、无人机、机器人、智能家居等多样化智能物联网领域。


2.超低功耗SoC系统开发项目

 ·带领团队开发了业界首枚14纳米CMOS无线低功耗WiFi SoC芯片,应用于搭建无线传感网、物联网和可穿戴设备。


3.先进CMOS工艺下高性能无线收发机的设计

 ·超过15年包括收发机前端的无线射频元件,无线系统开发及射频电路数字化创新。经历从90纳米到14纳米的无线系统开发,开发出用于低功耗和低成本无线系统的颠覆性的无线收发机的架构,并应用于英特尔无线通讯产品中。


4.高性能CMOS数字射频功率放大器(PA)

 ·领导并研发了多款高性能CMOS功率放大器。其中首创的outphasing和dynamic power control数字式功率放大器,成果证明了用数字方法实现射频的射频功率放大器,性能可以超越传统的设计方式。基于32纳米CMOS工艺研发的两款功率放大器,性能超越其他已同时期发布的设计,成为32纳米 CMOS功率放大器性能标杆。


5.全集成基于高性能GaN HEMT的微波电路(MMIC)

 ·净化间微波器件工艺开发经验。独立完成从微波器件制造到电路设计测试流程。

 ·开发出基于GaN HEMT的微波集成电路加工工艺,并对此工艺的有源器件和被动器件建立模型,设计开发包括PA,VCO和LNA在内的高性能微波电路。

 ·首创了可集成在化合物半导体上的可调制铁电材料器件制造工艺,极大减小微波元件的尺寸,并设计高性能自适应的微波电路。



近期论文/报告选摘


  • 1.X. Luo, H. J. Qian, Y. Yin, Hongtao Xu, “Empowering Multifunction: Digital Power Amplifiers, the Last RF Frontier of the Analog and Digital Kingdoms”, IEEE Microwave Magazine, 2020, 21(12), 47 – 67

  • 2.Y. Yin, L. Xiong, Y. Zhu, B. Chen, H. Min, and Hongtao Xu, “A Broadband Switched-Transformer Digital Power Amplifier for Deep Back-Off Efficiency Enhancement”, IEEE Journal of Solid-State Circuits (JSSC), 2020, 55(11), 2997 – 3008

  • 3.B. Chen, W. Luo, F. Wang, Y. Lin, N. Yan, and Hongtao Xu, “A 22.5–31.2-GHz Continuously Tuning Frequency Synthesizer With 8.7-GHz Chirp for FMCW Applications,” IEEE Microwave and Wireless Components Letters (MWCL), 2020, 30(9), 904 - 907

  • 4.P. Wang, J. Lin, F. Wang, J. Xiu, Y. Lin, N. Yan, and Hongtao Xu, “A Gesture Air-Writing Tracking Method that Uses 24 GHz SIMO Radar SoC,” IEEE ACCESS, 2020, 152728-152741

  • 5.D. Zheng, Y. Yin, Y. Zhu, L. Xiong, Y. Li, N. Yan, and Hongtao Xu, “A 15b Quadrature Digital Power Amplifier with Transformer-Based Complex-Domain Power-Efficiency Enhancement”, 2020 IEEE International Solid-State Circuits Conference (ISSCC), 2020, 370-371

  • 6.T. Li, L Xiong, Y. Yin, Y. Liu, H. Min, N. Yan, and Hongtao Xu, “A Wideband Digital Polar Transmitter with Integrated Capacitor-DAC-Based Constant-Envelope Digital-to-Phase Converter”, 2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2019, June 2-4

  • 7.Y. Yin, L. Xiong, Y. Zhu, B. Chen, H. Min, and Hongtao Xu, “A Compact Dual-Band Digital Polar Doherty Power Amplifier Using Parallel-Combining Transformer”, IEEE Journal of Solid-State Circuits (JSSC), 2019, 54(6), 1575-1585

  • 8.W. Luo, Y. Yin, L. Xiong, T. Li, and Hongtao Xu, “Nonlinear Analytical Model for Switched-Capacitor Class-D RF Power Amplifiers”, IEEE Transactions on Circuits and Systems I: Regular Papers (TCAS-I), 2019, 66(6), 2309-2321

  • 9.Y. Yin, Y. Zhu, L. Xiong, W. Luo, B. Chen, T. Li, N. Yan, and Hongtao Xu, “A Compact Transformer-Combined Polar/Quadrature Reconfigurable Digital Power Amplifier in 28nm Logic LP CMOS”, IEEE Journal of Solid-State Circuits (JSSC invited), 2019, 54(3), 709 - 719

  • 10.L. Xiong, T. Li, Y. Yin, H. Min, N. Yan, and Hongtao Xu, “A Broadband Switched-Transformer Digital Power Amplifier for Deep Back-Off Efficiency Enhancement”, 2019 IEEE International Solid-State Circuits Conference (ISSCC), 2019, 76-77

  • 11.T. Li, Y. Yin, Y. Zhu, L. Xiong, Y. Liu, N. Yan, H. Min and Hongtao Xu, “A wideband efficiency-enhanced Class-G digital power amplifier for IoT applications,” IEEE Microwave and Wireless Components Letters (MWCL), 2018, 28(8), 714 – 716

  • 12.Y. Zhu, L. Xiong, Y. Yin, W. Luo, B. Chen, T. Li, Hongtao Xu, “A Compact 2.4GHz Polar/Quadrature Reconfigurable Digital Power Amplifier in 28nm Logic LP CMOS”, 2018 IEEE Custom Integrated Circuits Conference (CICC), 2018, Apr 8-11 (Best Student Paper final list).

  • 13.Y. Yin, L. Xiong, Y. Zhu, B. Chen, H. Min, Hongtao Xu, “A Compact Dual-Band Digital Doherty Power Amplifier Using Parallel- Combining Transformer for Cellular NB-IoT Applications”, 2018 IEEE International Solid-State Circuits Conference (ISSCC), 2018, 408-410

  • 14.P. Madoglio, Hongtao Xu, K. Chandrashekar et al., “A 2.4GHz WLAN Digital Polar Transmitter with Synthesized Digital-to-Time Converter in 14nm Trigate/FinFET Technology for IoT and Wearable Applications”, 2017 IEEE International Solid-State Circuits Conference (ISSCC), 2017, 226- 227

  • 15.A. Ravi, P. Madoglio, Hongtao Xu et al., “A 2.4-GHz 20–40-MHz Channel WLAN Digital Outphasing Transmitter Utilizing a Delay-Based Wideband Phase Modulator in 32-nm CMOS”, IEEE Journal of Solid-State Circuits (JSSC), 2012, 47(12), 3184- 3196

  • 16.W. Tai, Hongtao Xu, Ravi, A. et al., “A Transformer-Combined 31.5 dBm Outphasing Power Amplifier in 45 nm LP CMOS With Dynamic Power Control for Back-Off Power Efficiency Enhancement”, IEEE Journal of Solid-State Circuits (JSSC), 2012, 47(7), 1646- 1658

  • 17.P. Madoglio, A. Ravi, Hongtao Xu et al., “A 20dBm 2.4GHz digital outphasing transmitter for WLAN application in 32nm CMOS”, 2012 IEEE International Solid-State Circuits Conference (ISSCC), 2012, 168- 170

  • 18.W. Tai, Hongtao Xu, A. Ravi et al., “A 31.5dBm Outphasing Class-D Power Amplifier in 45nm CMOS with Back-Off Efficiency Enhancement by Dynamic Power Control”. 2011 European Solid-State Circuits Conference (ESSCIRC), 2011, 131- 134

  • 19.Hongtao Xu, Y. Palaskas, A. Ravi et al., “A Flip-Chip-Packaged 25.3 dBm Class-D Outphasing Power Amplifier in 32 nm CMOS for WLAN Application”, IEEE Journal of Solid-State Circuits (JSSC invited), 46(7), 2011, 1596 – 1605

  • 20.Y. Tan, Hongtao Xu, M.A. El-tanani et al., “A flip-chip-packaged 1.8V 28dBm class-AB power amplifier with shielded concentric transformers in 32nm SoC CMOS”, 2011 IEEE International Solid-State Circuits Conference (ISSCC), 2011, 426 – 428

  • 21.Hongtao Xu, Y. Palaskas, A. Ravi et al., "A highly linear 25dBm outphasing power amplifier in 32nm CMOS for WLAN application”, 2010 European Solid-State Circuits Conference (ESSCIRC), 2010, 306 – 309

  • 22.Hongtao Xu, Y. Palaskas, A. Ravi et al., "A 28.1dBm class-D outphasing power amplifier in 45nm LP digital CMOS", 2009 Symposium on VLSI Circuits (VLSI-C), 2009, 206 - 207