屈新萍 博士                            English Version

 

教授,博导

 

纳米体系互连接触实验室

 

教育经历:

19937 学士,华中理工大学(现华中科技大学)固体电子学系

19967 硕士,中科院上海硅酸盐研究所无机非金属专业

1999 7 博士,复旦大学电子工程系微电子与固体电子学专业

 

工作经历:

2000.3 – 2001. 3比利时根特大学固态科学系,博士后科研,进行新型硅化物接触

研究、亚0.18um 铜互连技术的研究等。

2001.6 – 2001. 11 复旦大学微电子学系讲师

2001.11 – 2006.3 复旦大学微电子学系副教授

2005.9 – 2005.10 比利时根特大学访问学者

2006. 2 – 2006. 4 美国UCLA大学材料科学系访问学者

2009.12 – 2009.1 香港城市大学访问学者

2006. 4 – 至今      复旦大学微电子学学院教授,博士生导师。

2003. 9 – 2008. 7 复旦大学信息学院院长助理,主管外事。

2008. 8 - 至今     复旦大学信息学院党委副书记,主管人才引进和师资队伍建设。

 

 

科研项目:

在研项目:

国家自然科学基金(2016-2020),负责,72万。

 

已经结题的项目:

  1. 留学回国人员启动基金,负责(2002-2005
  2. 国家自然科学基金项目(金属诱导非晶Si-Ge-C薄膜低温横向结晶技术(2003-2005)、原子层淀积铜互连超薄扩散阻挡层研究(2006-2008),负责
  3. 中国-比利时国际合作项目(先进半导体的接触材料的形成和性能研究),负责(2004-2006)
  4. 上海市科技启明星项目(原子层淀积铜互连超薄扩散阻挡层研究),负责(2004-2007
  5. 上海市科技启明星跟踪项目(纳米压印制备手性材料),负责(2008-2010
  6. 上海市科委纳米中心项目:自组织硅化物纳米线制备及表征,负责(2002-2005
  7. 美国半导体基金会SRC项目:负责ALDPVD新型Ru/Ta基扩散阻挡层研究(2006-2008
  8. 国家高科技发展项目:新型纳米压印技术及开发,负责(2006-2008
  9. 上海市科委国际合作项目:先进铜互连中的籽晶层/扩散阻挡层研究,负责(2008-2010
  10. 比利时中国合作研究课题(原子层淀积金属和扩散阻挡层)(2008-2010
  11. 国家集成电路工艺和重大装备专项项目,课题负责人(2012.12结题,结题优秀,201202专项优秀团队),在专项支持下建立了化学机械抛光集成工艺研究平台(2009-2012
  12. 教育部新世纪优秀人才项目(2012-2015
  13. 国际教育培训项目(中国-德国合作) (先进互连材料和概念研究)的子课题(2010-2015)
  14. 国家基础重点科研项目子课题,学术骨干 2010.8-2015.8
  15. 上海市教委曙光学者计划(2013-2015
  16. 五项韩国三星-复旦大学国际合作项目(2014-2017 )

 

奖励:

  1. 1998年国际集成电路和固态技术会议上获最佳研究生论文奖
  2. 1999年获教育部科技进步三等奖
  3. 2002年入选复旦大学“世纪之星”计划,获得“教学和科研综合奖”
  4. 2003年入选上海市教育委员会评选的“2003年度上海高校优秀青年教师后备人选”。
  5. 2004年入选上海市科委科技启明星人才项目
  6. 2005获得复旦大学复华奖教金,并评为“复旦大学优秀世纪之星”
  7. 2008年获得上海市科委“启明星跟踪”人才项目
  8. 2008年度复旦大学陆宗霖奖教金
  9. 2009年获得上海高校优秀青年教师荣誉称号
  10. 2009年获得“复旦大学2009年度优秀研究生导师”称号
  11. 2011年获得“教育部新世纪优秀人才”称号
  12. 2012年获得上海市“曙光学者”称号

 

学生所获奖励:

 

  1. 谭晶晶,2008年复旦大学优秀硕士论文,上海市优秀硕士论文
  2. 周觅,  2006ICSICT最佳研究生论文奖
  3. 赵莹,  2008ICSICT最佳研究生论文奖
  4. 万景,  2010年复旦大学优秀硕士论文,上海市优秀硕士论文
  5. 丁少锋,2010首届教育部博士研究生学术新人奖
  6. 张晓萌,2010ICSICT最佳研究生论文奖
  7. 鲁海生,201111月获得ICPT国际会议(韩国召开)最佳学生Poster
  8. 王敬轩,2012ICSICT最佳研究生论文奖
  9. 鲁海生,2012年度教育部博士研究生学术新人奖,
  10. 鲁海生,2015年上海市优秀研究生(博士论文)成果奖
  11. 杨光,  2016年国际抛光大会ICPT best student paper award (第二名)

社会活动:

  1. IEEE高级会员,美国电化学学会会员
  2. 中国 化学机械平坦化联盟(China-CMPUG)副主席(2015-
  3. 国机械工程学会摩擦学分会微纳制造专业委员会副主任委员(2013-
  4. 国际ICPT会议执行委员会委员(2012-)
  5. 2016年国际抛光大会ICPT2016程序委员会主席(2016.10.17-19
  6. 20159月韩国ADEMTA会议邀请报告,5月海峡两岸平坦化技术研讨会(清华大学)邀请报告、分会主席
  7. 2014 3CSTIC会议邀请报告、3TFPM会议主旨报告、8月美国CMP会议(Albany)邀请报告、9月海峡两岸平坦化技术研讨会(台中)邀请报告;10ICSICT会议(桂林)分会主席
  8. 2013年海峡两岸平坦化技术研讨会(天津)邀请报告、分会主席
  9. 201210ICPT会议(法国, Grenoble)邀请报告、分会主席。
  10. 201111月国际ICPT会议(韩国,首尔)分会主席
  11. 20113CSTIC 会议邀请报告
  12. 20115月第六届复旦-诺发铜互连技术国际研讨会主席。2004-2008年五届复旦-诺发铜互连技术国际研讨会主席,
  13. 201010月国际集成电路和固态技术会议(ICSICT)分会主席,上海, 20101IEEE国际纳米电子学会议INEC (香港)分会主席
  14. 20082010年第八届、第十届国际结技术研讨会(IWJT)组织委员会共主席
  15. 2006年第六届国际结技术研讨会(IWJT)程序委员会共主席
  16. 2004年第四届国际结技术研讨会(IWJT)出版委员会主席,主编“第四届国际结技术研讨会”论文集
  17. 2001年编辑“第六届国际集成电路和固态技术会议”论文集(第三编辑),
  18. 美国电化学学会杂志欧洲Elsevier杂志(Thin solid films等)、IOP杂志(Nanotechnology)Wiley杂志、IEEE EDL、美国ACS杂志、中国半导体学报中国物理快报等杂志审稿人。

 

研究兴趣(Postdoctoral position is open!)

 

  1. 纳米体系互连工艺中新材料、新结构、新工艺研究,包括原子层淀积 金属和氮化物研究、新型超薄扩散阻挡层、无籽晶铜互连电镀研究、新型化学机械抛光工艺、超低K介质研究
  2. 纳米系统的接触和互连技术研究:包括石墨烯互连、新型纳米线互连及其他新型互连;
  3. 纳米光刻技术研究:包括利用Nanoimprint技术制备新型纳米结构及纳光学、纳电子学研究;利用DSA光刻技术制备超细纳米结构研究
  4. 低温高迁移率薄膜晶体管研究,包括低温多晶硅、透明氧化物薄膜及纳米线晶体管制备与研究;

 

科研设备:(化学机械抛光集成工艺平台,国家02重大专项支持,部分设备对外开放)链接

发表文章: 点击链接)

授权专利:8项;

课程

  1. 半导体物理 (上海市精品课程,本科生专业基础课,学分:3
  2. 电子薄膜材料测试表征(研究生专业课,学分:3
  3. 研究生专业英语(硕士生、博士生专业必修课)
  4. 纳米体系互连研究(博士生专业选修课)

 

研究生:(欢迎勤奋、积极向上、热爱科研、有合作精神、品学兼优的硕士生、博士生 (物理、材料、微电子、化学背景)加入纳米体系互连和接触实验室。2017 position open!

已毕业学生:

  1. 陆华,01级硕士,现在Sandisk工作
  2. 段鹏,02级硕士,现在Apple工作
  3. 谭晶晶,04级硕士,现在中芯国际公司工作 (2008年复旦大学优秀硕士论文、上海市优秀硕士论文)
  4. 谢琦, 03级硕博连读博士,赴比利时Gent大学进行博士后研究,现在ASM公司研发部(比利时IMEC实验室内)工作。
  5. 周觅, 05级硕士,美国U. North Texas硕士(2006ICSICT最佳研究生论文奖
  6. 陈韬, 05级博士,AMD公司(在学期间赴比利时Gent大学合作研究3个月)
  7. 刘书一,05级博士, Cadence公司(在学期间获留学基金委奖学金赴TUDELFT留学一年)
  8. 万景, 06级硕士,法国LETICNER研究所博士,曾在美国Global Foundary工作,2016年入选中组部青年千人,复旦大学青年研究员(2010年复旦大学优秀硕士论文,上海市优秀硕士论文)
  9. 邓少任,07级硕士,比利时根特大学博士、博士后,现在比利时ASM公司工作
  10. 李骥, 07级硕士,金融领域工作
  11. 赵莹, 07级硕士,在新加坡工作(2008ICSICT最佳研究生论文奖
  12. 高晨, 08级硕士, 美国Synopsis公司工作
  13. 丁少锋,08级博士,韩国三星公司进行研发工作(赴德国Chemnitz大学、比利时Gent大学从事合作研究首届教育部博士研究生学术新人奖)
  14. 陈飞, 09级硕士研究生,Sandisk
  15. 王永伟,09级硕士研究生,上海交大附中物理教师
  16. 张晓萌,09级硕士研究生,新加坡 2010ICSICT最佳研究生论文奖)
  17. 吴佳宏,09级硕士研究生, 华力微电子公司
  18. 王韬, 09级硕士研究生,现在AMD公司工作
  19. 鲁海生,08级直博生,华为海思半导体 (曾赴德国IRTG计划3个月,201111月获得ICPT国际会议(韩国召开)最佳学生Poster奖,2012年度教育部博士研究生学术新人奖, 2015年上海市优秀研究生(博士论文)成果奖
  20. 曾旭, 10级博士研究生,和辉光电公司(曾赴德国IRTG计划3个月)
  21. 王敬轩,10级硕士研究生,中国电子科技集团公司第十三研究(2012ICSICT最佳研究生论文奖)
  22. 邓燕平,10级硕士研究生,TI公司中国
  23. 徐文忠,11级博士研究生 (曾赴德国IRTG计划3个月,复旦大学2014年优秀毕业生))美国TE Connectivity公司
  24. 南鹏飞,11级硕士研究生,现在AMD公司工作
  25. 冯晖, 12级硕士研究生, 华为海思半导体
  26. 曹利奥,13级硕士研究生, 赴比利时GENT大学攻读博士学位
  27. 冯骥宇,13级硕士研究生,赴比利时GENT大学攻读博士学位
  28. 徐敬博,11级硕士研究生 (在学期间曾自愿参军2年),赴巴黎十一大攻读博士学位
  29. 王旭, 12级直博研究生,华为海思半导体 (曾赴德国IRTG计划3个月)
  30. 杨光, 14级硕士研究生,TPLINK公司(201610月获得国际ICPT大会best student paper award
  31. 何伟, 14级硕士研究生,TPLINK公司

 

 

出站博士后

 张文军,香港城市大学博士,2010年进站,20136月出站(期间赴英国一年),现为华中科技大学副研究员

 

在读学生:

  1. 杨爱国,10级博士研究生(曾赴德国IRTG计划6个月)
  2. 胡正军,11级博士研究生(上海集成电路研发中心在职博士生)
  3. 胡春凤,13级博士研究生(在职,赴德国IRTG计划3个月)
  4. 李冬雪,15级博士研究生(硕士:郑州大学)
  5. 何鹏, 15级博士研究生(硕士:云南大学)
  6. 舒刚强,16级博士研究生(硕士:上海大学)
  7. 胡连峰,16级博士研究生(中芯国际研发部门在职博士生)
  8. 张远, 16级硕士研究生(保送,本科:苏州大学)
  9. 覃昕晖,16级硕士研究生(本科:复旦大学)
  10. 吴兵兵,17级博士研究生(硕士:江南大学)
  11. 邵帅, 17级硕士研究生(保送,本科:大连理工大学)
  12. 腾彤, 17级硕士研究生(本科:复旦大学)

 

 

 

 

CURRICULUM VITAE

 

Xin-Ping Qu, Professor, PH.D.

 

Lab for Nanoscale Interconnect and Contact System Lab (NICS Lab)

 

 

Personal:

 

Work address:   

Room 310, Microelectronics Building
Department of Microelectronics
Fudan University

Han Dan Road 220

Shanghai, 200433, China

Tel.: +86 (21) 65643561

Email: xpqu@fudan.edu.cn 

 

 

Education:

1996-1999

Doctoral study in Fudan University, major in solid state electronics and microelectronics, Thesis title "Solid State Heteroepitaxy of CoSi2 on Si(100) substrates". Got PhD degree in 1999.

1993-1996

Master degree study at the Shanghai institute of Ceramics, Chinese academy of Science. Thesis title "Preparation and characterization of PZT ferroelectric thin films." Got M.S. degree in 1996.

1989-1993

Undergraduate study in the Huazhong University of Science and technology. Got
B.S. degree in 1993 with award of “Excellent Graduate”

 

Working Experience:

2000.3 2001.3

Postdoctoral Research in Gent University, Belgium.

2001.11 2006. 4

Associate professor in Dept. of Microelectronics.

2004. 9 – 2004. 10

Visiting researcher in Dept. of Solid State Science, Gent University, Belgium.

2006. 2 – 2006. 4

Visiting Scholar in Dept. of Material Science and Engineering, UCLA, US.

2006.4 Present

Full professor in Dept. of Microelectronics

2003. 9 2008.7

Assistant dean, School of Information Science and Technology. Mainly responsible for foreign public relationship.

2008.8 present

Deputy dean, School of Information Science and Technology. Mainly responsible for faculty recruit.

 

Honors:

2002: “Star of new century” plan in Fudan University, get “award in teaching and researching”.

2003: “Koda fellowship” (first class) awarded by Fudan University

2004: Attending “Phosphorus” plan of Shanghai committee of Science and technology.

2004-2005: “Guang Hua fellowship” awarded by School of information science and engineering

2005: “Fu Hua fellowship” (Excellent star of new century in Fudan university)

2009: “Excellent young university teacher in Shanghai” awarded by Shanghai municipal education commission”

2009: “Excellent Graduate supervisor of Fudan University in 2009” awarded by Fudan university.

2011: “New Century Excellent Talents in University” awarded by Ministry of Education, China

2012: “Shu Guang Scholar” awarded by Shanghai Municipal Education Commission and Shanghai Education Development Foundation.

 

Research Interests: (Postdoctoral position is open!)

  1. Copper interconnect technology: Especially on ultrathin diffusion barrier, Atomic layer deposition of metal and metal nitride, seedless electroplating technology, chemical mechanical polishing (CMP), adhesion in interconnect system, low k dielectrics (Funded by NSFC, National key research project, SRC(first SRC project in mainland China) , IRTG, Shanghai)
  2. Novel interconnect and contact for nanosystem: Graphene interconnect, nanowire interconnect and other novel contact/ interconnect technology
  3. Nanoimprint and its application in nano-optics, meta-material and nano-electronics; direct self-assembly lithography and its application
  4. Thin film transistor, such as LPTS, novel high mobility low temperature TFT (ZnO based film and other transparent oxide film).

 

Facilities: ( Funded by state key program)

  1. Thermal treatment: Rapid thermal annealing, Vacuum Furnace annealing, hot plates, Furnaces, Water bath, high pressure reactor, Ultraviolet curing
  2. Sol-Gel process: Spin coater,
  3. Desk-Top Polisher: CP-4 (2’ and 4’, films including metal, dielectrics, Si)
  4. Electroplating facility2’ and 4’
  5. Electrical Measurements: Keithley 4200, 2400, 2700, 6487, Agilent CV; 8” probe station, Mercury probe; Four point probe mapping (Four dimensional),
  6. Physical measurements: Filmetrics F-50 (UV), White light interference and Stylus profiler, Four point bending (adhesion between layers and cohesion of bulk materials), Kruss contact angle, Zeiss digital microscope,
  7. Electrochemical measurements: Chi-660 electrochemical station; PARASAT 2273 electrochemical station; PINE- Rotation disk electrode; INFICON - EQCM

 

Courses:

  1. Semiconductor Physics (Undergraduate)
  2. Principles of ULSI Semiconductor Processing (Undergraduate and Engineering master)
  3. Characterization of Electronic Thin Film (Graduate)
  4. Interconnect of Nano-system PHD

 

Professional Activity:

    1. IEEE Senior Member, ECS active member
    2. Executive Committee member of International conference of planarization technology (ICPT) (2012-)
    3. Vice director for Chinese CMPUG.(2013-)
    4. Program chair for International conference on Planarization/CMP technology (ICPT) 2016. (Oct. 17-19, 2016, Beijing, China)
    5. Executive Committee Co-Chair for the 8th, 10th, 12th, 14th IWJT (IWJT-2008, 2010, 2012, 2014)
    6. Publication Committee Co-chair for the fourth international workshop on junction technology (IWJT-2004) , Program Committee Co-chair for the sixth IWJT (IWJT-2006)
    7. Session Chair, INEC-2010(Hongkong), ICSICT 2010, ICSICT 2014, ICPT 2011(Korea), ICPT 2012(France), ICPT 2013(Taiwan).
    8. Invited talks, CSTIC conference (2011, 2014) , Shanghai, China.
    9. Invited talk, ICPT 2012 conference, Oct. 2012, Grenoble, France
    10. Keynote speech, APFA 2014, Shanghai, March.
    11. Invited talk, ADEMTA-PLUS, 2015, Seoul, Korea
    12. Organizing the 2004 - 2011 Fudan-Novellus international symposium on copper interconnect and related technology
    13. Reviewer for Journal of Electrochemical Society, Electrochem. Solid State Lett.; Elsevier journals such as Surface Coating Technology, Applied Surface Science, Material Science and Engineering A, Thin Solid Films, etc.; IOP journals, such as Naonotechnology, Journal of Physics:D, Chinese Physics Lett. etcACS journal such as Crystal Growth and Design, ACS applied physics and interface; Wiley Journal, such as Applied Physics A.; IEEE journals such as IEEE Electron Device, IEEE Electron device letter

 

Graduates: Eight have got the PHD degrees; Twenty three have got the master degrees; now there are 8 PHD students and 4 Master students.

 

Students Awards:

  1. TAN Jing-JingExcellent Master thesis awarded by Fudan University and by Shanghai municipal of education, 2008
  2. ZHOU Mi, Best Student paper, International conference on solid-state and integrated circuit technology, 2006
  3. ZHAO Ying, Best Graduate paper, International conference on solid-state and integrated circuit technology, 2008
  4. WAN Jing, Excellent Master thesis awarded Fudan University and by Shanghai municipal of education, 2010
  5. DING Shaofeng, Excellent academic research PHD candidate awarded by Ministry of Education, China, 2010.
  6. ZHANG Xiao-Meng, Best Graduate paper, International conference on solid-state and integrated circuit technology,2010
  7. LU Hai-Sheng, Best student Poster award, awarded by International conference on planarization technology (ICPT) 2011, Korea.
  8. WANG Jing-Xuan, Best Graduate paper, International conference on solid-state and integrated circuit technology,2012
  9. LU Hai-Sheng, Excellent academic research PHD candidate awarded by Ministry of Education, China, 2012
  10. LU Hai-Sheng, Excellent PHD thesis awarded Shanghai municipal of education
  11. YANG Guang, Best student paper award (silver), ICPT 2016, Beijing China.

 

Eight patents have been issued.

Recent Publications :

Journal papers: (*: Corresponding author)

  1. Guang Yang, Peng He, Xin-Ping Qu, Inhibition effect of glycine on molybdenum corrosion during CMP in alkaline H2O2 based abrasive free slurry, Applied Surface Science 427 (2018) 148–155
  2. Xin-Ping Qu*, Guang Yang, Peng He, Hui Feng, chemical mechanical polishing of Mo using H2O2 as oxidizer in silica based slurries, ECS J. Solid State Sci. Tech., 6 (7) P470-P476 (2017)
  3. Xu Wang, Lin-Tao Liu, Peng He, Xin-Ping Qu*, Jing Zhang, Shuhua Wei, Y. A. Mankelevich, and M. R. Baklanov*, Study of CoTa alloy as barrier layer for Cu/low-k interconnects, J. Physics D: Applied Physics, 50, 405306 (2017).
  4. Xu Wang, Peng He, Guang Yang, and Xin-Ping Qu*, Effect of CoxMoy as Single Barrier Layer on Properties of Directly Electroplated Copper Films, J. Electrochem. Soc. 163(14): D794-D800, 2016
  5. Chun-Feng Hu, Ji-Yu Feng, Jin Zhou, Xin-Ping Qu*, Investigation of oxygen and argon plasma treatment on Mg-doped InZnO thin film transistors, Appl. Phys. A, 122, 941 (2016).
  6. Xu Wang, Li-Ao Cao, Guang Yang, Xin-Ping Qu, Study of direct Cu electrodeposition on ultra-thin Mo for copper interconnect, Microelectronic engineering, 164, 7-13 (2016)
  7. Wen-Zhong Xu, Jing-Bo Xu, Hai-Sheng Lu, Jing-Xuan Wang, Zheng-Jun Hu, and Xin-Ping Qu*, Direct Copper Plating on Ultra-Thin Sputtered Cobalt Film in an Alkaline Bath, J. Electrochem. Soc. 160(12), D3075-D3080( 2013)
  8. Xin-Ping Qu*, Xiao-Meng Zhang, Ying Zhao, Shao-Ren Deng and Christophe Detavernier, Improved Diffusion Barrier Properties and NiSi Thermal Stability for the Cu Contact with the Ru/TaSiN Stack on NiSi/Si, ECS Solid State Lett.2 (1), P1-P3, (2013)
  9. Hai-Sheng Lu, Knut Gottfried, Nicole Ahner, Stefan Schulz, Xin-Ping Qu*, Investigation of CH4, NH3, H2 and He plasma treatment on porous low-k films and its effects on resisting moisture absorption and ions penetration, Microelectronic Engineering, 106, 85(2013).
  10. Wen-Jun Zhang, T. Qiu, X.P.Qu* and P. K. Chu, Atomic layer deposition of platinum thin films on anodic aluminium oxide templates as surface-enhanced Raman scattering substrates, Vacuum, 89, 257(2013)
  11. Tao Wang, Qu Xinping*, Research on ZnO Nanorods Grown on Si Substrate Etched by TMAH as Si Solar Cell Antireflection Layer, Journal of inorganic materials, 28(4), 420, 2013in Chinese. (湿法腐蚀硅片并生长氧化锌纳米棒作为太阳能电池减反层研究无机材料学报)
  12. Yong-Wei Wang, Xin-Ping Qu*, Study on CMP of copper interconnect with novel Mo-based diffusion barriers, Semiconductor Technology, 37(11),846. 2012(in Chinese).(Mo基新型扩散阻挡层的化学机械抛光研究,半导体技术)
  13. Jia-Hong Wu, Shu-Yi Liu, Shuti Li, Yu-Long Jiang, Guo-Ping Ru, and Xin-Ping Qu*, The influence of ZnO seed layers on the n-ZnO nanostructures/p-GaN LEDs,Applied Physics A, 109 (2), 489-495 (2012) (3次引用)
  14. Xu Zeng, Jing-Xuan Wang, Hai-Sheng Lu, Fei Chen, Xiao-Meng Zhang and Xin-Ping Qu*, Improved Removal Selectivity of Ruthenium and Copper by Glycine in Potassium Periodate (KIO4)-Based Slurry, J. Electrochem. Soc. 159(11), C525-C529( 2012)
  15. Shao-Feng Ding, Qi Xie, Fei Chen, Hai-Sheng Lu, Shao-Ren Deng, David Deduytsche, Christophe Detavernier, Xin-Ping Qu*, Improved thermal stability and electrical performance by using PEALD ultrathin Al2O3 film with Ta as Cu diffusion barrier on low k dielectrics,? ECS Solid State Lett. 1(3), 54-P56 (2012)
  16. Xu Zeng, Hong-Qi Sun, Yan-Feng He, Xin-Ping Qu*, Reflow discoloration formation on pure tin (Sn) surface finish, Microelectronic reliability, 52, 1153–1156 (2012)
  17. Hai-Sheng Lu, Xu Zeng, Jing-Xuan Wang, Fei Chen, Xin-Ping Qu*, The effect of Glycine and Benzotriazole on corrosion and polishing properties of cobalt in acid slurry, J. Electrochem. Society, 15(9), C383-387 (2012)
  18. Hai-Sheng Lu, Jing-Xuan Wang, Xu Zeng, Fei Chen, Xiao-Meng Zhang, Wen-Jun Zhang, and Xin-Ping Qu*, The Effect of H2O2 and 2-MT on the Chemical Mechanical Polishing of Cobalt Adhesion Layer in Acid Slurry, Electrochemical and Solid-State Letters, 15 (4) H97-H100 (2012)
  19. Shao-Feng Ding, Qi Xie, Steve Mueller, Thomas Waechtler, Hai-Sheng Lu, Stefan E. Schulz, Christophe Detavernier, Xin-Ping Qu*, and Thomas Gessner, The Inhibition of Enhanced Cu Oxidation on Ruthenium/Diffusion Barrier Layers for Cu Interconnects by Carbon Alloying into Ru, J.Electrochem.Soc., 158 (12) H1228 (2011)
  20. Shao-Feng Ding, Hai-Sheng Lu, Fei Chen, Yu-Long Jiang, Guo-Ping Ru, David Wei Zhang, and Xin-Ping Qu*, Density Functional Theory Study of Cu Adhesion on Rh, Ir, Pd, Ta, Mo, Ru, Co, and Os Surfaces, Japanese J. Applied Physics 50, 105701 (2011).
  21. Chen Gao , Zhen-Cheng Xu, Shao-Ren Deng, Jing Wan, Yifang Chen, Ran Liu, Ejaz Huq, Xin-Ping Qu*, Silicon nanowires by combined nanoimprint and angle deposition for gas sensing applications, Microelectronic Engineering , 88, 2100–2104 (2011)
  22. Ying Zhao, Mi Zhou, Guo-Ping Ru, Yu-Long Jiang, Xin-Ping Qu*, Cu contact on NiSi/Si with thin Ru/TaN barrier, Microelectronic Engineering, 88, 545–547 (2011)
  23. Ji Li, Hai-Sheng Lu, Yong-Wei Wang, Xin-Ping Qu*, Sputtered Ru-Ti, Ru-N and Ru-Ti-N films as Cu diffusion barrier, Oral presentation on MAM2010, Microelectronic engineering, 88, 635–640 (2011)
  24. Qi Xie, Yu-Long Jiang, Keon De Keyser, Christophe Detavernier, Davy Deduytsche, Guo-Ping Ru, Xin-Ping Qu*, K.N. Tu, The effect of sputtered W-based carbide diffusion barriers on the thermal stability and void formation in copper thin films, Microelectronic Engineering, 87, 2535 (2010)
  25. Shao-Feng Ding, Shao-Ren Deng, Hai-Sheng Lu, Yu-Long Jiang, Guo-Ping Ru, David Wei Zhang and Xin-Ping Qu* , Cu Adhesion on Tantalum and Ruthenium Surface: Density Functional Theory Study, J. Appl. Phys. 107, 103534 (2010)
  26. Yu-Long Jiang, Xin-Ping Qu*, Guo-Ping Ru, Bing-Zong Li, Schottky barrier height lowering induced by CoSi2 nanostructure, Applied Physics A, 99, 93–98(2010)
  27. Chen Gao, Shao-Ren Deng, Jing Wan, Bing-Rui Lu, Ran Liu, Ejaz Huq, Xin-Ping Qu*, Yifang Chen, 22nm silicon nanowire gas sensor fabricated by trilayer nanoimprint and wet etching, Microelectronic Engineering, 87, 927930 (2010)
  28. Tao Chen, Shu-Yi Liu, Qi Xie, Yu-Long Jiang, Guo-Ping Ru, Ran Liu, Xin-Ping Qu*, Patterned ZnO nanorods network transistor fabricated by low-temperature hydrothermal process, Microelectronic Engineering, 87, 14831486, (2010)
  29. Shao-Ren Deng, Bing-Rui Lu, Bi-Qing Dong, Jing Wan, Zhen Shu, Jing Xue, Yifang Chen, Ejaz Huq, Ran Liu and Xin-Ping Qu*, Effective polarization control of metallic planar chiral metamaterials with complementary rosette pattern fabricated by nanoimprint lithography, Microelectronic Engineering, 87,? 985988(2010)
  30. Tao Chen, Shu-Yi Liu,? Qi Xie, Christophe Detavernier, R.L. Van MeirhaegheXin-Ping Qu*In situ and ex situ investigation on the annealing performance of the ZnO film grown by ion beam deposition, J Mater Sci: Mater Electron.? 2188–95(2010)
  31. Tao Chen, Shu-Yi Liu,? Qi Xie, Christophe Detavernier, R.L. Van Meirhaeghe, Xin-Ping Qu*, The effects of deposition temperature and ambient on the physical and electrical performance of DC-sputtered n-ZnO/p-Si heterojunction, Applied Physics A, 98, 357365 (2010)
  32. Qi Xie, Yu-Long Jiang, Jan Musschoot, Davy Deduytsche, Christophe Detavernier, Roland L. Van Meirhaeghe, Sven Van den Berghe, Guo-Ping Ru, Bing-Zong Li, Xin-Ping Qu*, ?Ru thin film grown on TaN by plasma enhanced atomic layer deposition, Thin Solid Films, 517, 4689-4693 (2009)
  33. Shu-Yi Liu, Tao Chen, Yu-Long Jiang, Guo-Ping Ru, and Xin-Ping Qu*, The effect of post-annealing on the electrical properties of well-aligned n-ZnO nanorods / p-Si heterojunction, J. Appl. Phys. 105, 114504 (2009)
  34. Jing Wan, Shao-Ren Deng, Rong Yang, Zhen Shu, Bing-Rui Lu, Shen-Qi Xie, Yifang Chen, Ejaz Huq, Ran Liu , Xin-Ping Qu*, Silicon nanowire sensor for gas detection fabricated by nanoimprint on SU8/SiO2/ PMMA trilayer, Microelectronic Engineering,86, 12381242 (2009)
  35. Jing Wan, Zhen Shu, Shao-Ren Deng, Shen-Qi Xie, Bing-Rui Lu, and Ran Liu, Yifang Chen, Xin-Ping Qu*, Duplication of nanoimprint templates by a novel SU-8/SiO2/PMMA trilayer technique, J. Vac. Sci. Technol. B 27(1), 19-22, 2009 (Selected for the January 26, 2009 issue of Virtual Journal of Nanoscale Science & Technology)
  36. Shu-Yi Liu, Tao Chen, Jing Wan, Guo-Ping Ru, Bing-Zong Li and Xin-Ping Qu*, The effect of pre-annealing of sputtered ZnO seed layers on growth of ZnO nanorods through a hydrothermal method, ?Applied Physics A, 94(4),775, (2009)
  37. Qi Xie, Jan Musschoot, Davy Deduytsche, Roland L Van Meirhaeghe, Christophe Detavernier, Sven Van den Berghe, Yu-Long Jiang, Guo-Ping Ru, Bing-Zong Li, Xin-Ping Qu*, Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition, J. Electrochem. Soc. 155, H688-H692 (2008)
  38. Mi Zhou, Ying Zhao, Wei Huang, Bao-Min Wang, Guo-Ping Ru, Yu-Long Jiang, Ran Liu, Xin-Ping Qu*, Cu contact on NiSi substrate with a Ta/TaN barrier stack, Oral presentation at MAM-2008 conference, March, 2-5, 2008, Dresden, Microelectronic Engineering, 85,? 20282031(2008)
  39. Qi Xie, Jan Musschoot, Christophe Detavernier, Davy Deduytsche, Roland L Van Meirhaeghe, S. Van den Berghe, Yu-Long Jiang, Guo-Ping Ru, Bing-Zong Li and Xin-Ping Qu*, Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma, Microelectronic Engineering,85, 20592063 (2008)
  40. Qi Xie, Yu-Long Jiang, C. Detavernier, D. Deduytsche, R. L. Van Meirhaeghe, Guo-Ping Ru, Bing-Zong Li, Xin-Ping Qu*, Atomic layer deposition of TiO2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and H2O, J. Appl. Phys. 102, 083521 (2007).
  41. Mi Zhou, Chen Tao, Jing-Jing Tan, Guo-Ping Ru, Yu-Long Jiang, Ran Liu, Xin-Ping Qu*, Effects of pretreatment of TaN substrates on atomic layer deposition growth of Ru thin films, Chin. Phys. Lett. 24, 1400 (2007).
  42. Xin-Ping Qu*, Jing-Jing Tan, Mi Zhou, Qi Xie, Tao Chen, Guo-Ping Ru, Improved barrier properties of ultrathin Ru film with TaN interlayer for copper metallization, Appl. Phys. Lett., 88, 151912 (2006).
  43. Xin-Ping Qu*, Peng Duan, Yan-Qing Wu, Tao Chen, Guang-Wei Wang, Guo-Ping Ru, Bing-Zong Li, Investigation of Ni reaction with sputtered SiGe thin film on SiO2 substrate, J. Vac. Sci. Tech.A24, 20 (2006).
  44. Xin-Ping Qu*, Mi Zhou, Tao Chen, Qi Xie, Guo-Ping Ru, Bing-Zong Li, Study of Ultrathin Vanadium Nitride as diffusion barrier for copper interconnect, Microelectronic Engineering, 83,236 (2006).
  45. Jing-Jing Tan, Xin-Ping Qu*, Qi Xie, Guo-Ping Ru, Bing-Zong Li, The properties of Ruthenium on Ta-based barriers , Thin Solid films, 504, 231-234 (2006).
  46. Qi Xie, Xin-Ping Qu*, Jing-Jing Tan, Yu-Long Jiang, Mi Zhou, Tao Chen, Guo-Ping Ru, Superior thermal stability of Ta/TaN bi-layer structure for copper metallization, Applied Surface Science, 253, 1666-1672 (2006)
  47. Jing-Jing Tan, Xin-Ping Qu*, et.al, Ultra-thin Ru/TaN bilayer as diffusion barrier for copper metallization, Chin. J. Semiconductors, 27, 197-201 (2006). (in Chinese)
  48. Xin-Ping Qu*, Hua Lu, Tao Peng, Guo-Ping Ru, and Bing-Zong Li, Effects of preannealing on the diffusion barrier properties for ultrathin W-Si-N thin film, Thin Solid Films,462-463, 67 (2004).
  49. Xin-Ping Qu*, Yu-Long Jiang, Guo-Ping Ru, Fang Lu, Bing-Zong Li, C. Detavernier, and R. L. Van Meirhaeghe, Thermal stability, phase and interface uniformity of Ni-silicide formed by Ni-Si solid-state reaction, Thin Solid Films,462-463, 146 (2004).
  50. Peng Duan, Xin-Ping Qu*, Ping Liu, Z. H. Xu, G. P. Ru, B. Z. Li, Ni induced crystallization of amorphous SiGe, Chin. J. Semiconductors, 25(11), 1453-1457, 2004. (in Chinese)
  51. H. Lu, Xin-Ping Qu*, G.W. Wang, G. P. Ru, B.Z.Li, Ultra-thin W-Si-N films as diffusion barrier between Cu and Si, Chin. J. Semiconductors, 24(6),164-168 (2003)Detavernier C, Qu Xin-Ping, Van Meirhaeghe RL, et al. Mixing entropy and the nucleation of silicides: Ni-Pd-Si and Co-Mn-Si ternary systems, J MATER RES 18 (7): 1668-1678 (2003)
  52. Xin-Ping Qu*, Bei-Lei Xu, Guo-Ping Ru, Bing-Zong Li, W. Y. Cheung, S. P. Wong, P. K. Chu, Solid phase epitaxial growth of CoSi2 by Co/C/Si(100) reactionChin. J. Semiconductors241, 63 (2003). (in Chinese) 20031月)
  53. Bei-Lei Xu, Xin-Ping Qu*, et.al, Epitaxial growth of CoSi2 by Co/a-GeSi/Ti/Si multilayer solid state reaction, Research and development of solid state electronics, 23149 2003(in Chinese)
  54. Xin-Ping Qu*, Guo-Ping Ru, et.al, Solid state reaction of Ni/Pd/Si and improvement of NiSi thermal stability Chin. J. Semiconductors23, 11732002(in Chinese)
  55. Xin-Ping Qu, Guo-Ping Ru, Yong-Zhao Han, Bei-Lei Xu, Bing-Zong Li, Ning Wang, and Paul K. Chu, Epitaxial growth of CoSi2 film by Co/a-Si/Ti/Si(100) multilayer solid state reaction, J. Appl. Phys., 89, 2641 (2001).
  56. Qu XP, Ru GP et.al,Characterization of Schottky barrier contact between ultra thin epitaxial CoSi2/n-Si, Chin. J. Semiconductors21473-479 2000
  57. Qu XP, Ru GP, et.al, Investigation of Co/Si/Ti/Si and Co/Si../Ti/Si multilayer solid phase reaction applied in self-aligned elevated silicide strucuture, Chin. J. Semiconductors211972000
  58. Xin-Ping Qu, Bing-Zong Li, et.al, Heteroepitaxial growth of CoSi2 on Si(100) substrate by Co/Si/Ti/Si multilayer solid phase reaction, Chin. J. Semiconductors , 19, 641 (1998)
  59. Xin-Ping Qu, Bing-Zong Li, Hetero-epitaxy of CoSi2 on Si substrate, Research and progress of solid state electronics, ?18, 449 (1998)?

  60. Peer reviewed Conference paper:

    ?
  61. D. X. Li, and X. P. Qu*,  Block copolymer lithography and transferred patterns on the substrate used for SERS. Oral presentation, Oct. 25-28, Hangzhou, China, Proceedings of IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2016, s20-4.
  62. J.Y. Feng, C.F. Hu, and X. P. Qu*, Study of DC sputtered SnO growth and its applications in thin film transistors. Oral presentation, Oct. 25-28, Hangzhou, China, Proceedings of IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2016, s04-5.
  63. W. He, and X.P. Qu*. Improved Contact Properties of Metal/Graphene Interface by Inserting MoOx Dielectric Layer, Oral presentation, Oct. 25-28, Hangzhou, China, Proceedings of IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2016, s53-5.
  64. Guang Yang, Peng He, Jingbo Xu, and Xin-Ping Qu, Effect of K2CO3 on the CMP of Ru in Alkaline H2O2 based slurry, pp 314, oral presentation at 2016 international conference on planarization /CMP technology (ICPT 2016), Beijing, China. (Best student paper award)
  65. Peng He, Guang Yang, Jing-Bo Xu and Xin-Ping Qu, 1,2,4-Triazole as corrosion inhibitor for cobalt CMP in H2O2 based acidic slurry, pp320, oral presentation at 2016 international conference on planarization /CMP technology (ICPT 2016), Beijing, China.
  66. Jingbo Xu, Guang Yang, Peng He, Xin-Ping Qu, A solution to reduce the galvanic corrosion current of Ru-Cu in KIO4 based slurry, Poster presentation at 2016 international conference on planarization /CMP technology (ICPT 2016), Beijing, China.
  67. Xu Wang, Guang Yang, Li-Ao Cao and Xin-Ping Qu, Barrier layer dependence of self-annealing effect in directly electroplated copper films, International Interconnect Technology Conference (IITC) 2016, pp189-191.
  68. Li-Ao Cao and Xin-Ping Qu, The oxygen barrier properties of CoxMoy diffusion barrier for Cu interconnect, International Interconnect Technology Conference 2016, pp165-167.
  69. Guang Yang, Hui Feng, Xin-Ping Qu*, Study of inhibition mechanism of glycine on the electrochemical behavior of Mo in the alkaline slurry, proceedings of the ?International Conference on Polarization/CMP technology (ICPT), Sep.30-Oct. 2, 2015, Phoenix, USA. pp247-249, 2015.
  70. Xu Wang, Li-Ao Cao, Xin-Ping Qu*, direct copper electroplating on novel CoMo diffusion barrier, pp127-129, Poster presentation, proceedings of International interconnect technology conferenece (IITC) 2015, Grenoble, France.
  71. Hui Feng, Li-Ao Cao, Ji-Yu Feng, and Xin-Ping Qu*, Effects of Colloidal Silica on the CMP of Molybdenum in the Alkaline Slurry, oral presentation at the International Conference on Polarization/CMP technology (ICPT), 2014, Nov 19-21. Kobe, Japan. Pp66-68.
  72. L.A. Cao, H. Feng, X. Wang and X. P. Qu*. ?Investigation of the adhesion properties between CoxMoy alloys and porous low-K. Oral presentation, Oct. 28-31, Guilin, China, Proceedings of IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014, pp. 111-113.
  73. J. Y. Feng, C. F. Hu and X. P. Qu*. Study of DC sputtered Cu2O growth and p-Cu2O/ n-IGZO heterojunctions. Oral presentation, Oct. 28-31, Guilin, China. Proceedings of IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014, pp. 99-101.
  74. C. F. Hu, J. Y. Feng and X. P. Qu*. Improved electrical properties of bottom-gate MIZO thin film transistors using oxygen and argon plasma treatment. Oral presentation, Oct. 28-31, Guilin, China. ?Proceedings of IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014, pp. 654-656.
  75. X. Wang, H. Kim and X. P. Qu*. Properties of directly electroplated copper on CoMo alloy diffusion barrier. Oral presentation, Oct. 28-31, Guilin, China . Proceedings of IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014, pp. 117-119.
  76. H. Feng, L. A. Cao and X. P. Qu*. Effect of glycine on CMP process of molybdenum. Oral presentation, Oct. 28-31, Guilin, China . Proceedings of IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014, pp. 120-122.
  77. Z. J. Hu, X. P. Qu*, L.H. et.al. Cu seed, CMP process development and via resistance extraction in through silicon via technology. Poster presentation, Oct. 28-31, Guilin, China. ?Proceedings of IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014, pp.1148-1150.
  78. Xin-Ping Qu*, Xu Wang, Li-Ao Cao, Wen-Zhong Xu, Study of a single layer ultrathin CoMo film as a direct plateable adhesion/barrier layer for next generation interconnect, post presentation, proceedings of International interconnect technology conferenece, pp 257-259 (IEEE - IITC) May.20, 2014, San Jose, US.
  79. Wen-Zhong Xu, Xu Wang, Li-Ao Cao, Jing-Xuan Wang, and Xin-Ping Qu*, The effect of H2O2 and Glycine on the CMP of a novel CoMo alloy barrier, oral presentation at International conference on planarization technology(ICPT 2013), p54, 2013, Oct. Taiwan, China
  80. Jingbo Xu, Wen-zhong Xu, Li-Ao Cao, Hui Feng, Xin-Ping Qu*, Chemical Mechanical Polishing of RuTa Alloy with Potassium Periodate Based Slurry, oral presentation at International conference on planarization technology(ICPT 2013), p80, 2013, Oct. Taiwan, China
  81. Xu Zeng, Hui Feng, Wen-Zhong Xu, Jing-Bo Xu and Xin-Ping Qu*, CMP of Mo using KIO3 as oxidizer in the colloidal silica based slurries, oral presentation at International conference on planarization technology(ICPT 2013), p171, 2013, Oct. Taiwan, China,
  82. Pen-Fei Nan, Xu Wang, Xin-Ping Qu*, Ag dendrite formed on the Cu pyramids as SERS substrateASICON 2013, p506– p508 , 2013, Oct. Shenzhen, China
  83. Jing-Bo Xu, Feng-Hui, Wen-Zhong Xu, Xu-Wang, Peng-Fei Nan,Yu-Ling Liu, Xin-Ping Qu*, Barrier and low k Polish with a Novel Alkaline Barrier slurry combining with FA/O chelating agent, ASICON 2013, p 1027 – p1030 , 2013, Oct. Shenzhen, China
  84. Wen-Zhong Xu, Jing-Xuan Wang, Hai-Sheng Lu, Xu Zeng, Jing-Bo Xu and Xin-Ping Qu*, Direct Copper Electrodeposition onto Cobalt Adhesion Layer in Alkaline Bath, ICSICT 2012, p386.
  85. Jing-Xuan Wang, Wen-Zhong Xu, Fei Chen, Hai-Sheng Lu, Xu Zeng and Xin-Ping Qu*, The thermal and electrical properties of CoMo alloys as copper adhesion/barrier layers, ICSICT 2012, p 389 (Best student paper awards)
  86. Yan-Ping Deng, Jia-Hong Wu and Xin-Ping Qu*, Effects of oxygen plasma etching and post-annealing on Pt Schottky contact on Mg-doped InZnO, ICSICT 2012, p 573.
  87. Xin-Ping Qu, Hai-Sheng Lu, CMP of Co and Mo based films, invited talk at ICPT 2012, p363, Grenoble, France.
  88. Fei Chen, Xu Zeng, Jing-Bo Xu, Hai-Sheng Lu, Xin-Ping Qu, The effect of H2O2 and ammonia sulfate on the CMP of molybdenum, p377, oral presentation at ICPT 2012, Grenoble, ?France.
  89. Yanping Deng, Jia-Hong Wu, Yifang Chen, and Xin-Ping Qu*, Effects of oxygen plasma treatment on optical properties of ZnO nanorods, 38th international conference on, Micro and nano engineering conference, 2012, 16-20 Sep, 2012, Toulouse, France.
  90. Wen-Jun Zhang, Xin-Ping Qu*, Bing-Rui Lu and Yi-Fang Chen, Tunable Silver Nano-pillar Arrays as a Surface-enhanced Raman Scattering Sensor by a Self-aligned Nanofabrication Process, The 56th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication(EIPBN 2012, 29 May-01 June, 2012, Hawaii, USA.)
  91. Hai-Sheng Lu, Jing-Xuan Wang, Xu Zeng, Fei Chen, Xiao-Meng Zhang, Xin-Ping Qu*, Chemical mechanical polishing of Tantalum ?with Guanidine as a removing enhancer in acid slurry, poster presentation at International conference on polishing technology, 2011, Nov. 9-11. Korea.p.110. (Best poster awards)
  92. Hai-Sheng Lu, Jing-Xuan Wang, Xu Zeng, Fei Chen, Xiao-Meng Zhang, Xin-Ping Qu*Investigation of Chemical Mechanical Polishing of Cobalt in Acid Slurry, poster presentation at International conference on polishing technology, 2011, Nov. 9-11. Korea.p.420.
  93. Xiao-Meng Zhang, Fei Chen, Jing-Xuan Wang, Hai-Sheng Lu, Xu Zeng and Xin-Ping Qu*, The Comparison of effects between acidic and alkaline barrier slurries on SiOCH low-k material (k=2.5), poster presentation at International conference on polishing technology, 2011, Nov. 9-11. Korea.p.106.
  94. Fei Chen, Xiao-Meng Zhang, Hai-Sheng Lu, Xu Zeng and Xin-Ping Qu*, Chemical Mechanical Polishing of Molybdenum Using Glycine Based Slurries, poster presentation at International conference on polishing technology, 2011, Nov. 9-11. Korea. p.424.
  95. Xu Zeng, Hai-Sheng Lu, Fei Chen, Xiao-Meng Zhang, Jing-Xuan Wang, Xin-Ping Qu*, Improved Removal Selectivity of Ruthenium and Copper by Glycine in Potassium Periodate (KIO4)-Based Slurry, Oral presentation at International conference on polishing technology, 2011, Nov. 9-11. Korea.p.129.
  96. Hai-Sheng Lu-, Knut Gottfried, Nicole Ahner, Stefan Schulz, Xin-Ping Qu*Surface modification of porous low-k material by plasma treatment and its application on reducing the damage from sputtering and CMP process, presented at IEEE IITC MAM 2011, May, Dresden, Germany.
  97. Shao-Feng Ding, ?Qi Xie, Fei Chen, Hai-Sheng Lu, Shao-Ren Deng, Christophe Detavernier, Guo-Ping Ru, Yu-Long Jiang, Xin-Ping Qu*, Investigation of ultra-thin Al2O3 film as Cu diffusion barrier on Low-k (k=2.5) dielectrics, Presented at IEEE IITC/MAM 2011, Dresden, Germany.
  98. Shao-Feng Ding, ?Fei Chen, Qi Xie, Hai-Sheng Lu, Christophe Detavernier, Xin-Ping Qu*, CoMo alloys as Barrier/ seed-layer for Cu metallization , presented at IEEE IITC/MAM 2011, Dresden, Germany.
  99. Xin-Ping Qu*, Ying Zhao, Qi Xie, Xiao-Meng Zhang, Christophe Detavernier, Improved barrier properties of Ru/TaSiN stack on NiSi/Si for copper contact technology, Oral presentation at Advanced Metallization Conference (AMC 2010), 5-7, Oct., 2010, Albany, New York
  100. ?Xiao-Meng Zhang, Ying Zhao, Fei Chen and Xin-Ping Qu*, Ru/TaSiN with Different Ta/Si Atomic Ratio as Barrier for Cu Contact on NiSi Substrate, Oral Presentation at for ICSICT 2010, pp.1018-1020. (Best student paper award)
  101. Fei Chen, Shao-Feng Ding, Xiao-Meng Zhang and Xin-Ping Qu*, Study of the Sputtered Mo/TaN and Mo-Ta Thin Film as Diffusion Barrier for Copper Metallization, Proceedings of ICSICT 2010, pp.1042-1044.
  102. Hai-Sheng Lu, Shao-Feng Ding, Guo-Ping Ru, Yu-Long Jiang, Xin-Ping Qu*, Investigation of Co/TaN bilayer as Cu diffusion barrier, accepted for ICSICT 2010, pp.1045-1047.
  103. ?Shao-Feng Ding, Qi Xie, Christophe Detavernier, Xin-Ping Qu*, Thermal stability of ultrathin RuC film as Cu diffusion barrier, oral presentation for ICSICT 2010, pp.1009-1011.
  104. Shu-Yi Liu, Jia-Hong Wu, Shu-Ti Li, Tao Chen, Shao-Ren Deng, Yu-Long Jiang, Guo-Ping Ru and Xin-Ping Qu*, The EL properties of well-aligned n-ZnO nanorods / p-GaN structure, Oral Presentation for ICSICT 2010, pp.1244-1246.
  105. Shao-Ren Deng, Tao Chen, Shu-Yi Liu, Yifang Chen, E. Huq, Ran Liu, Xin-Ping Qu*, Highly Ordered Growth of ZnO Nanostructures by Combination of? Nanoimprint Lithography and Hydrothermal Method, Proceedings of 3rd IEEE International Nanoelectronics Conference, Hongkong, JAN 03-08, 2010, VOLS 1 AND 2, pp 941-942, 2010
  106. Tao Chen; Shu-Yi Liu; Shao-Ren Deng; Bing-Zong Li, Xin-Ping Qu*, The Effects of High Work Function Electrodes on the Electrical Properties of Solution Processed ZnO Thin Film Transistor, oral presentation at 3rd IEEE International Nanoelectronics Conference, Hongkong, JAN 03-08, 2010, VOLS 1 AND 2  : 1191-1192 , 2010
  107. Shao-Feng Ding, Qi Xie, Thomas Waechtler, Hai-Sheng Lu, Stefan E. Schulz, Xin-Ping Qu* , Inhibition of enhanced Cu oxidation on Ruthenium, 2010 International interconnect technology conference (IEEE IITC 2010, San Francisco), poster presentation, 8.9, 2010.
  108. Jing Wan, S. R. Deng, Yifang Chen, E. Huq, R Liu, X. P. Qu*, Trilayer Nanoimprint Fabrication and Simulation of the Silicon Nanowire Sensor for Gas Detection, 2009 4TH IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS, VOLS 1 AND 2  pp. 1013-1016 ?(2009)
  109. Ying Zhao, Mi Zhou, Ji Li, G.-P. Ru, Y.-L. Jiang, B.-Z. Li and X.-P. Qu*, Cu contact on NiSi/Si with a Ru/TaN Barrier Stack, Oral presentation on International conference on Integrated circuits and solid state technology, Beijing, Oct. 20-23, 2008. (Best student paper award)
  110. Qi Xie, X.-P. Qu*, Y.-L. Jiang, G.-P. Ru, B.-Z. Li, J. Musschoot, C. Detavernier, R L Van Meirhaeghe, Comparison of Ru thin film grown on Si, TiN/Si and TaN/Si substrates by plasma enhanced atomic layer deposition, Oral presentation on International conference on Integrated circuits and solid state technology, Beijing, Oct. 20-23, 2008.pp1223-1226, 2008.
  111. Qi Xie, Xin-Ping Qu*, Y.-L. Jiang, G.-P. Ru, B.-Z. Li, J. Musschoot, C. Detavernier, R L Van Meirhaeghe, High-quality Ru thin film grown on TaN by plasma enhanced atomic layer deposition, poster presentation on Advance Metallization conference, San Diego, Sep. 23-25, USA. Published by MRS.
  112. Shu-Yi Liu, Tao Chen, Yu-Long Jiang, Guo-Ping Ru, Bing-Zong Li and Xin-Ping Qu*,? Improvement of the crystallinity and optical properties of sol-gel ZnO thin film by a PVD ZnO buffer layer ICSICT 2008, pp738-741
  113. Tao Chen, Shu-Yi Liu, Christophe Detavernier, R. L. Van Meirhaeghe and Xin-Ping Qu*, Physical and optical properties of ZnO thin films grown by DC sputtering deposition, ISCIST 2008. pp742-745
  114. Xin-Ping Qu*, Jing-Jing Tan, et.al, Comparison of Ru/Ta and Ru/TaN as barrier stack for copper metallization, Symposium on Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects held at the 2006 MRS Spring Meeting, San Francisco, APR 18-21, 2006, MATERIALS, TECHNOLOGY AND RELIABILITY OF LOW-K DIELECTRICS AND COPPER INTERCONNECTS : 914, pp.149-154, 2006
  115. Jing-Jing Tan, Qi Xie, Mi Zhou, Tao Chen, Yu-Long Jiang, Xin-Ping Qu*, ?Investigation of Ru/TaN on low dielectric constant material with k=2.7, International conference on solid state and integrated circuit technology, ICSICT 2006, p339-341.
  116. Qi Xie, Yu-Long Jiang, C. Detavernier, R. L. Van Meirhaeghe, Xin-Ping Qu*, Tungsten carbides as a diffusion barrier for Cu metallization, ICSICT, 2006, pp342-344.
  117. Mi Zhou, Tao Chen, Jing-Jing Tan, Feng Zhao, Guo-Ping Ru, Bingzong Li, Xin-Ping Qu*,? ALD Growth of Ru on RIE-pretreated TaN substrate, ICSICT 2006, pp330-332. (Best Student paper award)
  118. Tao Chen, Jian-Ping Liu, Mi Zhou, Wei Wang, Jing-Jing Tan, Xin-Ping Qu*, Investigation of Ni reaction with amorphous SiGeC thin film, ICSICT 2006, P1013-1015.
  119. Xin-Ping Qu*, Mi Zhou, et.al, Reactively sputtered Vanadium nitride as diffusion barrier for copper interconnect, the 7th international conference on solid-state and integrated circuits technology proceedings, p520, 2004.
  120. Xin-Ping Qu et.al, A Study on (Co1-xNixSi2) Shottky contacts on n-Si(100) substrates, Semiconductor Technology, Proceedings of the 1st international conference on semiconductor technology, published by the electrochemical society, P.540(2001).
  121. X. P. QU, et.al, Silicide formation for Ni and Pd bilayers on Si(100) substrates, Materials Research Society Symposium - Proceedings v 670, 2001, pp. K6101-K6106.
  122. Li BZ; Qu XP; Ru GP; Process and mechanism of CoSi2/Si solid phase epitaxy by multilayer reaction, Symposium on Nucleation and Growth Processes in Materials held at the 1999 MRS Fall Meeting, BOSTON, MA , NOV 29-DEC 01, 1999, NUCLEATION AND GROWTH PROCESSES IN MATERIALS, MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS,    580, pp 117-122 , 2000
  123. Xin-Ping Qu, Guo-Ping Ru, Bing-Zong Li, C. Detavernier, R. L. Van Meirhaeghe,F. Cardon, Formation and characterization of SPE grown ultra-thin cobalt disilicide film, ?Symposium N on Advanced Interconnects and Contacts, at the 1999 MRS Spring Meeting , ADVANCED INTERCONNECTS AND CONTACTS,    MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, Vol: 564 , pp157-162, 1999
  124. Xin-Ping Qu, Guo-Ping Ru, J. H. Liu, et.al The effect of amorphous Si on the epitaxial growth of CoSi2 by Co/Si/Ti/Si solid state epitaxy, 5th International Conference on Solid-State and Integrated Circuit Technology ( BEIJING, PEOPLES R CHINA, OCT 21-23, 1998) , proceedings of 5TH International conference on solid state and integrated circuit technology, pp 264-267, 1998
  125. Xin-Ping Qu, Guo-Ping Ru, Bing-Zong Li, et.al, Si/CoSi2/Si(100) heteroepitaxial growth by molecular beam epitaxy and novel solid phase epitaxy, proceedings of 5th International Conference on Solid-State and Integrated Circuit Technology ( BEIJING, PEOPLES R CHINA, OCT 21-23, 1998)? pp 268-270, 1998

 

Invited Talks/Seminar:

  1. Xin-Ping Qu, Ultrathin novel CoMo diffusion barrier for Cu interconnect, Invited talk at ADMETA plus 201516-18, Sep, 2015, Seoul, Korea.
  2. Xin-Ping Qu, Investigation of novel Mo metal CMP, Cross - Strait advanced substrate planarization technology symposium, Invited talk at May 29, 2015, Tsinghua University, Beijing, China.
  3. Xin-Ping Qu, Chemical mechanical polishing of novel diffusion barrier for interconnect, Cross - Strait advanced substrate planarization technology symposium(海峡两岸先进基板研磨加工技术交流), keynote speech, Sep.1, 2014, Chin-yi Tech(NCUT,台湾勤益大学), Taiwan, China,
  4. Xin-Ping Qu, Novel CoMo diffusion barrier for copper interconnect, Invited by Prof. Toh-Ming Lu, Department of physics, ?Rensselaer Polytechnic Institute, Aug. 12, 2014, NY, US.
  5. Xin-Ping Qu, CMP of Mo metal in the abrasive-free slurry, the 19th International symposium on chemical-mechanical planarization, Aug.10-13, 2014, Albany, US.
  6. Xin-Ping Qu, Advanced nanoscale CMOS procedss technology, Keynote speech, 9th international workshop on Advanced photonivcs failure analysis technology in IC (APFA‘2014),? Shanghai, Fudan University (held by Dept. of Material science), Mar. 20, 2014
  7. Xin-Ping Qu, Novel CoMo diffusion barrier for copper interconnect , CSTIC, March, 16, 2014, Shanghai, China
  8. Xin-Ping Qu, Novel material and process research in advanced copper interconnect, The first Hanyang-Fudan IT-semiconductor Joint workshop, July.5, 2013, Hanyang University, Seoul, Korea.
  9. Xin-Ping Qu, Invited talk, Cross - Strait advanced substrate planarization technology symposium, Hebei university of technology, May.17, 2013, Tianjing, China
  10. Xin-Ping Qu, invited talk, CMP of Co and Mo based films, ICPT 2012,? Grenoble, France.
  11. Xin-Ping Qu, Advanced diffusion barrier for copper interconnect, Oct. 1, 2010, CAMP, Clarkson University, US

 

 

Last updated on Dec., 2016.

 

 

 

 
 
 
 

 

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