刘文军

基本资料

籍贯:江苏
职称:青年研究员
地址:上海市杨浦区邯郸路220号复旦大学微电子学楼B211室
电话:021-55664324
Emailwjliu@fudan.edu.cn

 

主要教育与工作经历

  1. 2005~2009  复旦大学微电子学系,理学博士
  2. 2009~2012  新加坡南洋理工大学微电子系,博士后研究员
  3. 2012~2015  日本东京大学材料工程系,日本学术振兴会JSPS研究员
  4. 2015~至今   复旦大学微电子学院,青年研究员

20096月毕业于复旦大学微电子系,获得微电子学与固体电子学博士学位。自2009年4月至2015年7月先后在新加坡南洋理工大学,新加坡制造技术研究院和日本东京大学主要从事微纳米电子器件与工艺、器件失效分析、新型半导体材料光电子器件等研究。其中2012年至2015年受日本文部省学术振兴会(Japan Society for the Promotion of Science)资助,在日本东京大学工学院材料工程系担任日本学术振兴会(JSPS)研究员。20157月,作为引进人才加入复旦大学微电子学院,任青年研究员。目前,已在国内外期刊IEDM(3)EDL/T-ED20篇)等发表学术论文90余篇,其中SCI检索>50篇,EI检索>35篇,引用>500次,并为IEEE T-ED, Nanoscale research letters, Solid-state electronics, Journal of the electrochemical society等国际期刊审稿。现为IEEE/日本应用物理协会会员,2016年获“浦江人才计划

 

研究方向

  1. 新型宽禁带氧化物半导体器件与工艺(e.g. Oxide Semiconductor, Ga2O3
  2. 高迁移率电子器件及可靠性(High Mobility DevicesReliability
  3. 低维电子材料与器件(Low Dimensional Materials and Devices
  4. 柔性器件与系统(Hybrid Devices for Flexible Electronics

教学科目

  1. IC可靠性及应用
  2. 半导体测试技术

在研/参与项目

  1. 引进人才启动项目
  2. 院所项目x
  3. 校所合作项目x
  4. 浦江计划项目
  5. 国家基金委面上项目
  6. 02重大专项子课题
  7. 科技部重点项目子课题

 迎校内外有志于新型微纳米电子器件与工艺研究,具有微电子、物理、材料、光电等相关专业背景的同学联系

代表性著作/论文

 

加入复旦后

*corresponding author

  1. H. M. Zheng, J. Gao, S. M. Sun, Q. Ma, Y. P. Wang, B. Zhu, W. J. Liu*, H. L. Lu, S. J. Ding*, David W. Zhang, “Effects of Al2O3 Capping and Post-Annealing on the Conduction Behavior in Few-layer Black Phosphorus Field-Effect Transistors,” IEEE Journal of the Electron Devices Society(J-EDS), to appear, 2018.
  2. Q. Ma, H. M. Zheng, Y. Shao, S. M. Sun, B. Zhu, W. J. Liu*, S. J. Ding*, David, W. Zhang, “Atomic-Layer-Deposition of Indium Oxide Films for Thin-Film Transistors Application,” Nanoscales Research Letters, to appear, 2018.
  3. W. J. Liu, W. F. Zhang*, “Defect Generation in Monolayer and Bilayer Graphene in O2 Annealing,” Nano Advances, to appear, 2018.
  4. J. Gao, W. J. Liu, H. L. Lu, S. J. Ding*, David W. Zhang, “High performance ultraviolet photodetectors with atomic-layer-deposited ZnO films via low-temperature post-annealing in air,” AIP Advances, to appear, 2018.
  5. Z. J. Ding, Y. P. Wang, W. J. Liu, S. J. Ding, M. Baklanov, and David W. Zhang, “Characterization of PECVD ultralow dielectric constant porous SiOCH films using triethoxymethylsilane precursor and cinene porogen,” Journal of Physics D: Applied Physics, to appear, 2018.
  6. C. J. Gu, X. Q. Liu, X. D. Xu, W. Wang, W. J. Liu, T. L. Duan, “Investigating the impact of the defect dynamic characteristics on the PBTI in the high-κ gate device,” Microelectronics Reliability, to appear, 2018.
  7. W. J. Liu, Y. H. Wang, L. L. Zheng, Q. Ma, H.L. Lu, S. J. Ding*, “Stability Enhancement of Low Temperature Thin-Film Transistors with Atomic-Layer-Deposited ZnO:Al Channels,” Microelectronics Engineering, 167, 105–109, 2017.
  8. W. J. Liu*, L. Chen, P. Zhou, Q. Q. Sun, H. L. Lu, S. J. Ding, and David W. Zhang, “Chemical-Vapor-Deposited Graphene as Charge Storage Layer in Flash Memory Device,” Journal of Nanomaterials, Article ID:6751497, 6 pages, 2016.
  9. B. B. Wu, Y. Q. Ding*, H. M. Zheng, W. J. Liu*, H. L. Lu, P. Zhou, L. Chen, Q. Q. Sun, S. J. Ding, David W. Zhang”Direct Growth of Al2O3 on Black Phosphorus using Plasma Enhanced Atomic Layer Deposition,” Nanoscale Research Letters, 12, 282, 2017.
  10. S. B. Qian, Y. Shao, W. J. Liu, David W. Zhang, and S. J. Ding*, “Erasing-Modes Dependent Performance of a-IGZO TFT Memory With Atomic-Layer- Deposited Ni Nanocrystal Charge Storage Layer,” IEEE Transactions on Electron Devices, 64(7), 3023-3027,2017.
  11. H. Y. Chen, H. L. Lu, J. X. Chen, F. Zhang, X. M. Ji, W. J. Liu, X. F. Yang. David W. Zhang, “Low temperature one-step growth of AlON thin films with homogenous nitrogen doping profile by plasma enhanced atomic layer deposition" ACS Applied materials and Interfaces , 2017.
  12. Long Sun, Hong-Liang Lu*, Hong-Yan Chen, Tao Wang, Xin-Ming Ji, Wen-Jun Liu, Dongxu Zhao, Anjana Devi, Shi-Jin Ding, David Wei Zhang, “Effects of post annealing treatments on the interfacial chemical properties and band alignment of AlN/Si structure prepared by atomic layer deposition,” Nanoscale Research Letters, 12, 102 (2017).
  13. X. K. Liu*, H. Gu, Hong, K. L. Li, L. C. Guo, J. F. Wang, L. Wang, H. T. Yang, H. C. Kuo, X. H. Liu, W. J. Liu, L. Chen, J. P. Fang, M. H. Liu, L. N. Lin, K. W. Ang, K. Xu, J. P. Ao,“Vertical GaN Schottky Barrier Diodes with High Current Ion/Ioff Ratio (~2.3×1010) on Free-Standing GaN Wafer,” Journal of Materials Research,2017.
  14. X. K. Liu*, H. Gu, Hong, K. L. Li, L. C. Guo, J. F. Wang, L. Wang, H. T. Yang, H. C. Kuo, X. H. Liu, W. J. Liu, L. Chen, J. P. Fang, M. H. Liu, L. N. Lin, K. W. Ang, K. Xu, J. P. Ao, “AlGaN/GaN High Electron Mobility Transistors with a low Sub-threshold Swing on Free-standing GaN Wafer,” AIP ADVANCIES, 2017.
  15. X. K. Liu*, H. Gu, K. Li, J. He, K. lai, D. Zhu, Y. L, W. He, F. Fang, J. Wang, H. C. Kuo, Z. Liu, W. J. Liu, L. Chen, Y. Hao, K. Xu, J. P. Ao, “GaN Schottky Barrier Diodes on Free-Standing GaN Wafer,” ECS Journal of Solid State Science and Technology, 2017.
  16. B. Zhu, W. J. Liu, L. Wei, L. Chen, H. L. Lu, Q. P. Zhou, David W. Zhang, A. Q. Jiang, S. J. Ding*, “Voltage Linearity Modulation and Polarity Dependent Conduction in Metal-Insulator-Metal Capacitors with Atomic-Layer-Deposited Al2O3/ZrO2/SiO2 Nano-Stacks,” Journal of Applied Physics, 118, 014501, 2015.
  17. X. K. Liu, J. Z. He, D. Tang, Q. Liu, J. Wen, W. J. Yu*, Y. M. Lu, D. L. Zhu, W. J. Liu, P. J. Cao, S. Han, J. S. Pan, W. J. Liu, K. W. Ang, and Z. B. He, “Band alignment of atomic layer deposited high-k Al2O3/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy,” Journal of Alloy compound, 650,502-507, 2015.
  18. Y. H. Wang, Q. Ma, L. L. Zheng, W. J. Liu, S. J. Ding*, H. L. Lu, David W. Zhang, “Influence of Post-Annealing on Electrical Characteristics of Thin-Film Transistors with Atomic-Layer- Deposited ZnO-Channel/Al2O3-Dielectric,” Chinese Physics Letters, 33(5), pp.058501, 2016.
  19. T. Wang, H. L. Lu*, J. X. Chen, H. Y. Chen, W. J. Liu, S. J. Ding, and David W. Zhang, “Performance Enhancement of amorphous IGZO Thin-Film Transistors Using Trilayer Structure,” IEEE Electron Devices Letters,  under review, 2017.
  20. Y. P. Wang, Z. J. Ding, Q. X. Liu, W. J. Liu, S. J. Ding*, David W. Zhang, “Plasma-assisted Atomic Layer Deposition and Post-annealing Enhancement of Low Resistivity and Oxygen-free Nickel Nano-films Using Nickelocene and Ammonia Precursors,” Journal of Materials Chemistry C, 2016,4(47), 11059-11066.
  21. Z. J. Ding; Y. P. Wang; W. J. Liu, S. J. Ding*, “Ultralow dielectric constant nanoporous SiOCH films prepared by plasma-enhanced chemical vapor deposition,” Microelectronic Engineering, under review, 2017.
  22. Y. H. Wang, Q. Ma, L. L. Zheng, W. J. Liu, S. J. Ding*, “Performance Improvement of Atomic Layer Deposited ZnO/Al2O3 Thin- Film Transistors by Low Temperature Annealing in Air,” IEEE Transaction on Electron Devices, 63(5), pp. 1893-1898, 2016.
  23. L. L. Zheng, Q. Ma, Y. H. Wang, W. J. Liu, S. J. Ding*, David W. Zhang, “High Performance Unannealed a-InGaZnO TFT with an Atomic-Layer-Deposited SiO2 Insulator,” IEEE Electron Devices Letters, 37(6), 743-746, 2016.
  24. L. L. Zheng, Q. Ma, Y. H. Wang, W. J. Liu, S. J. Ding*, David W. Zhang, “Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs with an Atomic Layer Deposited Al2O3/SiO2 Stacked Insulators,” IEEE Journal of the Electron Devices Society, 4(5), 347, 2016.
  25. L. Wei, Q. X. Liu, B. Zhu, W. J. Liu, S. J. Ding*, H. L. Lu, A. Q. Jiang, David W. Zhang, “Low-cost and High Productivity Three-dimensional Nanocapacitors Based on Stand-up ZnO nanowires for Energy Storage,” Nanoscales Research Letters,11, pp.213, 2016.
  26. X. K. Liu*, J. Z. He, Q. Liu, D. Tang, W. J. Yu*, W. J. Liu, Y. M. Lu, D. L. Zhu, W. J. Liu, P. J. Cao, and S. Han“Low Temperature Carrier Transport Study of Monolayer MoS2 Field-effect Transistor Prepared by Chemical Vapor Deposition Under Atmospheric Pressure,” Journal of Applied Physics, 118(12), 124506, 2015.
  27. X. K. Liu, K. W. Ang*, W. J. Yu, J. Z. He, X. W. Feng, Q. Liu, H. Jiang, D. Tang, J. Wen, Y. M. Lu, W. J. Liu, P. J. Cao, S. Han, J. Wu, W. J. Liu, X. Wang, D. L. Zhu* & Z. B. He*, “Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature,” Scientific Report, 6, 24920; doi:10.1038/srep24920 (2016).
  28. Y. Zhang, H. L. Lu*, T. Wang, Q. H. Ren, H. Y. Chen, H. Zhang, X. M. Ji, W. J. Liu, S. J. Ding, David W. Zhang, “Photoluminescence enhancement of ZnO nanowire arrays with atomic layer deposited ZrO2 coatings and thermal annealing,” Physical Chemistry Chemical Physics, 18(24), 16377-85, 2016.
  29. H. Y. Chen, H. L. Lu*, L. Sun, Q. H. Ren, H. Zhang, X. M. Ji, W. J. Liu, S. J. Ding, David W. Zhang*, “Realizing a facile and environmental-friendly fabrication of high-performance multi-crystalline silicon solar cells by employing ZnO nanostructures and an Al2O3 passivation layer,” Scientific Reports, 6, 38486 (2016).
  30. Q. H. Ren, Y. Zhang, H. L. Lu*, H. Y. Chen, Y. Zhang, D. H. Li, W. J. Liu, S. J. Ding, A. Q. Jiang, David W. Zhang, “Surface-plasmon mediated photoluminescence enhancement of Pt-coated ZnO nanowires by inserting an atomic-layer-deposited Al2O3 spacer layer,” Nanotechnology, 27(16), 165705, 2016.
  31. S. B. Qian, Y. P. Wang, Y. Shao, W. J. Liu, S. J. Ding*, “Plasma-assisted Atomic Layer Deposition of High-density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin-film Transistor Memory,” Nanoscale Research Letters, 2017.
  32. S. B. Qian, W. P. Zhang, W. J. Liu, and S. J. Ding*, “Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al2O3/ Pt nanocrystals/Al2O3 gate stack,” AIP ADVANCES 5, 127203, 2015.
  33. S. B. Qian, W. P. Zhang, W. J. Liu, S. J. Ding*, “High-performance In-Ga-Zn-O TFT Memory with Pt nanocrystals,” International conference on Solid State Devices and Materials (SSDM),PS-4-4,2015.
  34. W. P. Zhang, S. B. Qian, W. J. Liu, S. J. Ding*, David W. Zhang, “Novel Multi-Level Cell TFT with an In-Ga-Zn-O Charge Storage Layer and Channel,” IEEE Electron Devices Letters, vol. 36, no. 10, pp.1021-1023, 2015.
  35. B. Zhu, W. J. Liu, L. Wei, S. J. Ding*, “Voltage-dependent capacitance behavior and underlying mechanisms in metal-insulator-metal capacitors with Al2O3-ZrO2-SiO2 nano-laminates," Journal of Physics D: Applied Physics, vol. 49, 135106, 2016.
  36. H. W. Yuan, H. Shen, J. J. Li, J. H. Shao, D. Huang*, Y. F. Chen, P. F. Wang, S. J. Ding, W. J. Liu, A. Chin, and M. F. Li*, “Investigation of Traps at MoS2/Al2O3 Interface in nMOSFETs by Low-Frequency Noise,” IEEE Electron Devices Letters, 37(4), 516-518, 2016.
  37. Y. H. Wang, L. L. Zheng, Q. Ma, W. J. Liu, and S. J. Ding*, “Effect of Al doping on the performance of low temperature thin-film transistors with atomic-layer-deposited ZnO:Al Channels,” Materials for Advanced Metallization, pp.225-256, 2016.
  38. W. P. Wang, J. Gao, Z. J. Ding, W. J. Liu, S. J. Ding*, “Atomic Layer Deposited Ultra-thin Ta-Ni-N Films for Cu Diffusion Barriers,” 17th International Conference on Atomic Layer Deposition/4th International Atomic Layer Etching Workshop, Denver, Colorado, USA, 2017.
  39. H. Y. Chen, Q. H. Ren, J. X. Chen, Y. Z. Gu, W. J. Liu, H. L. Lu, David W. Zhang, “Effect of Post annealing on the Performance of Ultraviolet Photodetectors with Atomic-Layer-Deposited ZnO,” 17th International Conference on Atomic Layer Deposition/4th International Atomic Layer Etching Workshop, Denver, Colorado, USA, 2017.
  40. H. M. Zheng, Q. Ma, J. Gao, S. M. Sun, W. J. Liu*, S. J. Ding* P. Zhou, H. L. Lu, L. Chen, Q. Q. Sun, David W. Zhang, “Mobility Boosting in Black Phosphorus Field-Effect Transistors by Interface Engineering of Inserting Atomic-Layer-Deposited High-k Dielectrics,” Advances in Functional Materials Conference, Los Angeles, USA, 2017.
  41. H. M. Zheng, B. B. Wu, W. J. Liu*, S. J. Ding*, H. L. Lu, P. Zhou, L. Chen, Q. Q. Sun, David W. Zhang, “The Shottky Barrier Tuning Effect of Post Rapid Thermal Process on Al2O3 Passivated BP FETs,” International Conference on Materials for Advanced Technologies (ICMAT), Singapore, 2017.
  42. B. B. Wu, H. M. Zheng, W. J. Liu*, S. J. Ding*, H. L. Lu, P. Zhou, L. Chen, Q. Q. Sun, David W. Zhang, “Integrating Al2O3 on Crystalline BP using Plasma Enhanced Atomic Layer Deposition,” International Conference on Materials for Advanced Technologies (ICMAT), Singapore, 2017.
  43. Q. Ma, H. M. Zheng, Y. Shao, S. M. Sun, B. Zhu, W. J. Liu, S. J. Ding*, David, W. Zhang, “Atomic-Layer-Deposition of Indium Oxide Films for Thin-Film Transistors Application,” Advances in Functional Materials Conference, Los Angeles, USA, 2017.
  44. H. M. Zheng, Q. Ma, J. Gao, S. M. Sun, W. J. Liu*, S. J. Ding* P. Zhou, H. L. Lu, L. Chen, Q. Q. Sun, David W. Zhang, “Mobility Boosting in Black Phosphorus Field-Effect Transistors by Interface Engineering of Inserting Atomic-Layer-Deposited High-k Dielectrics,” Advances in Functional Materials Conference, Los Angeles, USA, 2017.
  45. X. K. Liu*, H. Gu, K. Li, J. He, K. lai, D. Zhu, Y. L, W. He, F. Fang, J. Wang, H. C. Kuo, Z. Liu, W. J. Liu, K. W. Ang, Y. Hao, K. Xu, J. P. Ao, “Unpassivated AlGaN/GaN HEMTs with Ideal Subthreshold Swing (~60mV/dev) on Extremely High Quality Free-standing GaN Substrate,” International conference on Solid State Devices and Materials (SSDM), 340-341, 2017.  

 

加入复旦前

  1. W. J. Liu, X. A. Tran, Z. Fang, H. D. Xiong* and H. Y. Yu*, “A Self-Compliant One-Diode-One-Resistor Bipolar Resistive Random Access Memory for Low Power Application,” IEEE Electron Devices Letters, 35(2), 196-198, 2014.
  2. (Invited) W. J. Liu, J. Wei, X. W. Sun, H. Y. Yu*, “A Study on Graphene-Metal Contact,” Crystals, 3 (1), 257-274, 2013.
  3. W. J. Liu, X. A. Tran, Y. H. Yu* and X. W. Sun*, “A Self-rectifying Unipolar HfOx Based RRAM using Doped Germanium Bottom Electrode,” Electrochemical and Solid-State Letters, 2 (5), Q35-Q38, 2013.
  4. W. J. Liu, H. Y. Yu*, S. H. Xu, Q. Zhang, X. Zou, J. L. Wang, K. L. Pey, J. Wei, H. L. Zhu, and M. F. Li, “Understanding Asymmetric Transportation Behavior in Graphene Devices using Scanning Kelvin Probe Microscopy,” IEEE Electron Device Letter, 32(2), 128-130, 2011.
  5. W. J. Liu, H. Y. Yu*, J. Wei, M. F. Li, “Impact of Process Induced Defects on the Contact Characteristics of Ti/Graphene Devices,” Electrochemical and Solid-State Letters, 14 (12), K67-K69, 2011.
  6. W. J. Liu, X. W. Sun, Z. Fang, Z. R. Wang, X. A. Tran, F. Wang, L. Wu, G. I. Ng, J. F. Zhang, J. Wei, H. L .Zhu, H. Y. Yu*, “Positive Bias-Induced Vth Instability in Single Layer Graphene Field Effect Transistors,” IEEE Electron Device Letter, 33 (3), 339-341, 2012.
  7. W. J. Liu, X. W. Sun, X. A. Tran, Z. Fang, Z. R. Wang, F. Wang, L. Wu, J. F. Zhang, J. Wei, H. L. Zhu and H. Y. Yu*, “Vth Shift in Single Layer Graphene Field Effect Transistors and Its Correlation with Raman Inspection,” IEEE Transaction on Devices and Materials Reliability, 12(2), 478-481,2012.
  8. W. J. Liu, X. A. Tran, X. B. Liu, J. Wei, H. Y. Yu* and X. W. Sun*, “Characteristics of a Single-Layer Graphene Field Effect Transistor with UV/Ozone Treatment,” Electrochemical and Solid-State Letters, 2 (1), M1-M4, 2013.
  9. W. J. Liu, X. W. Sun, X. A. Tran, Z. Fang, Z. R. Wang, F. Wang, L. Wu, J. F. Zhang, J. Wei, H. L. Zhu and H. Y. Yu*, “Observation of the Ambient Effect in BTI Characteristics of Back-Gated Single Layer Graphene Field Effect Transistors,” IEEE Transaction on Electron Devices, 60 (8), 2682-2686, 2013.
  10. W. J. Liu, M. F. Li, S. H. Xu, Q. Zhang, Y. H. Zhu, K.L. Pey, H. L. Hu, Z.X. Shen, X. Zou, J. L. Wang, J. Wei, H. L. Zhu, and H.Y. Yu*, “Understanding the Contact Characteristics in Single or Multi-Layer Graphene Devices: the Impact of Defects (Carbon Vacancies) and the Asymmetric Transportation Behavior,” IEEE International Electron Device Meeting (IEDM), 2010, 560-563.
  11. W. J. Liu, Z. Y. Liu, Daming Huang*, C. C. Liao, L. F. Zhang, Z. H. Gan, Waisum Wong, C. Shen, Ming-Fu Li*, “On-The-Fly Interface Trap Measurement and Its Impact on the Understanding of NBTI Mechanism for p-MOSFETs with SiON Gate Dielectric,” IEEE International Electronic Device Meeting (IEDM), 2007, 813-816.
  12. W. J. Liu, Daming Huang*, Q. Q. Sun, C. C. Liao, L. F. Zhang, Z. H. Gan, Waisum Wong, Ming-Fu Li*, “Studies of NBTI in pMOSFETs with Thermal and Plasma Nitrided SiON Gate Oxides by OFIT and FPM Methods,” IEEE International Reliability Physics Symposium (IRPS), 2009, 964-968.
  13. W. J. Liu, H.Y. Yu*, H. L. Hu, V. Tjoa, J. Wei, “Impact of Process and Thermal Annealing on Ti/Graphene Contact,” International Conference on Material for Advanced Technologies, 2011.
  14. W. J. Liu, H.Y. Yu*, B. K. Tay, S. H. Xu, Y. Y. Wang, H. L. Hu, Z. X. Shen, J. Wei, M. F. Li, “Physical and Electrical Characterization of Junction between Single-Layer Graphene (SLG) and Ti Prepared by Various Processes,” IEEE International Workshop on Junction Technology (IWTJ), 1-3, 2010.
  15. W. J. Liu*, X. A. Tran, H, Y, Yu, X. W. Sun, “Hysteresis Caused by the Ambient in Single Layer Graphene Field Effect Transistors,” International Conference of Young Researchers on Advanced Materials, 2012.
  16. W. J. Liu*, H. Y. Yu, X. A. Tran, X. W. Sun “Characteristics of graphene field effect transistor treated by annealing,” the 5th IEEE International Nanoelectronics Conference, 2013.
  17. W. J. Liu*, “Threshold voltage shift in back-gated single-layer graphene field-effect transistor,” ATI Nano-Carbon Meeting at Zao, Yamagata, 2013.
  18. W. J. Liu, D. M. Huang, Z. Y. Liu, Y. Luo, C. C. Liao, L. F. Zhang, Z. H. Gan, Waisum Wong, Ming-Fu Li*, “Investigations of NBTI by Conventional and New Measurement Methods for p-MOSFETs,” IEEE Nano-Electronics Conference, 2008, 995-998.
  19. W. J. Liu, Z. Y. Liu, Y. Luo, G. F. Jiao, X. Y. Huang, D. Huang, C. C. Liao, L. F. Zhang, Z. H. Gan, W. Wong, Ming-Fu Li*, “Characteristics of NBTI in pMOSFETs with Thermally and Plasma Nitrided Gate Oxides,” IEEE International Conference on Solid-State and Integrated-Circuit Technology, 2008, 648-650.
  20. W. J. Liu, K. Nagashio, A. Toriumi*, “Defects generation in mono- and bi-layer graphene in O2 annealing,” Japanese Society of Applied Physics, pp. 19p-E2-08, 2014.
  21. W. J. Liu, K. Nagashio, T. Nishimura, and A. Toriumi*, “Defect Generation in Mono-layer Graphene in O2-PDA and FGA,” International conference on Solid State Devices and Materials (SSDM), 340-341, 2014.
  22. W. J. Liu, Q. Mi*, J. Qin, “Influence of Broad Beam Cold Cathode and End Hall Ion Sources on Transmissivity and stress,” Applied Optics (Chinese), 26(2), 51-53, 2005.
  23. X. A. Tran*, W. J. Liu, “Understanding of Rectifying Behavior in AlOy Based RRAM by Low Noise Frequency Measurement,” IEEE Conference on Electron Devices and Solid-State Circuits(EDSSC), 2015.
  24. J. L. Qi, K. Nagashio*, W. J. Liu, T. Nishimura, A. Toriumi, “Epitaxial CVD graphene growth on Cu/Mica for gate-stack research,” International conference on Solid State Devices and Materials (SSDM), 432-433, 2013
  25. Z. Fang, H. Y. Yu*, W. J. Liu, Z. R. Wang, X. A. Tran, B. Gao, and J. F. Kang, “Temperature Instability of Resistive Switching on HfOx-Based RRAM Devices,” IEEE Electron Device Letters, 31 (5), 476-478, 2010.
  26. X. A. Tran, H.Y. Yu*, Y.C. Yeo, L. Wu, W. J. Liu, Z.R. Wang, Z. Fang, K. L. Pey, X. W. Sun, A. Y. Du, B. Y. Nguyen, M. F. Li, “A High-Yield HfOx-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar Integration ,” IEEE Electron Device Letter, 32 (3), 396, 2011.
  27. Z. R. Wang, V. Tjoa, L. Wu, W. J. Liu, Z. Fang, X.A. Tran, J. Wei, and H.Y. Yu*, “Mechanism of Different Switching Directions in Graphene Oxide Based RRAM,” Journal of Electrochemistry Society, 59, K177-K182, 2012.
  28. X. A. Tran, W. Zhu, W. J. Liu, H. Y. Yu*, “Self-rectifying Bipolar Resistive Switching Based HfOx RRAM,” Electrochemical and Solid-State Letters, 2012, to appear.
  29. L. Wu, H. Y. Yu*, K. S. Yew, W. J. Liu, T. T. Le, T.L. Duan, X. F. Yu, D.Y. Lee, K.Y. Hsu, J. Xu, H. J. Tao, M. Cao, “Multi-deposition Multi Room-Temperature Annealing via Ultraviolet Ozone for HfZrO High-k and Integration With a TiN Metal Gate in a Gate-Last Process,” IEEE Transaction on Electron Devices, 58, 2177, 2011.
  30. Z. R. Wang, A. Y. Du, L. Wu, Z. Fang, X. A. Tran, W. J. Liu, W. Zhu and H. Y. Yu*, “Highly uniform, self-compliance and forming free ALD HfO2 based RRAM with Ge Doping,” IEEE Transactions on Electron Devices, 59(4), 1203, 2012.
  31. X. A. Tran, W. Zhu, W. J. Liu, Y.C. Yeo, B.Y. Nguyen, and H.Y. Yu*, “Self-Rectifying and Self compliance Bipolar RRAM,” IEEE Transaction on Electron Devices, 60 (1), 391-395, 2013.
  32. L. Wu, H.Y. Yu*, K.S. Yew, D. S. Ang, W. J. Liu, T. T. Le, T. L. Duan, X. F. Yu, D.Y. Lee, K.Y. Hsu, J. Xu, H. J. Tao, M. Cao, “Novel Multi Deposition Multi Room-Temperature Annealing Technique via Ultraviolet-Ozone to Improve High-K/Metal (HfZrO/TiN) Gate Stack Integrity for a Gate-Last Process,” IEEE International Electron Device Meeting (IEDM), 2010, 273-276.
  33. Z. Fang, H.Y. Yu*, W. J. Liu, K.L. Pey, X. Li, L. Wu, Z.R. Wang, Patrick G.Q. Lo, B. Gao, J. F. Kang, “Bias Temperature Instability of Binary Oxide Based (HfOx) ReRAM,” IEEE International Reliability Physics Symposium (IRPS), 2010, 964-965.
  34. Z. Fang, H. Y. Yu*, X. Li, K. L. Pey, W. J. Liu, “High Performance HfOx-Based Resistive RAM Devices and Its Temperature Dependent Switching,” IEEE International Symposium on Integrated Circuits (ISIC),2009,B26.
  35. Z. Fang, H.Y. Yu*, W. J. Liu, N. Singh, and G.Q. Lo, “Resistive RAM Based on HfOx and Its Temperature Instability Study,” International Conference on Electrical and Communication Engineering, 2010, 907-909.
  36. X. Ho, H. J. Lu, W. J. Liu, J. N. Tey, C. K. Cheng, E. Kok, J. Wei*, “Electrical and Optical Properties of Hybrid Transparent Conductors That Combine Metal Grids with Graphene Films,” Material Research Society Fall Meeting, San Francisco, Nov. 25-30, 2012.
  37. X. A. Tran, W. J. Liu, H. Y. Yu*, W. G. Zhu, “Self-rectifying Bipolar Resistive Switching Based HfOx RRAM for Crossbar Array Application,” 5th Material Research Society of Singapore: Conference on Advanced Materials, 2012.
  38. X. Ho, H. J. Lu, W. J. Liu, J. N. Tey, C. K. Cheng, E. Kok, J. Wei*, “Electrical and optical properties of hybrid transparent electrodes that use metal grids and graphene films,” Journal of Material Research, 2013, 34, 1-7.
  39. X. A. Tran, H.Y. Yu*,B. Gao, J.F. Kang, W. J. Liu, Z. Fang, Z.R. Wang , Y.C. Yeo, B.Y. Nguyen, M.F. Li , W. Zhu “A Unipolar HfOx Based RRAM with NiSi Electrode,” IEEE Electron Device Letter, 32 (4), 585, 2012.
  40. X. A. Tran, W. Zhu, W. J. Liu, B. Gao, J. F. Kang, Z. Fang, Z. R. Wang, B.Y. Nguyen, M.F. Li, and H.Y. Yu*, “A Self-retifying AlOx Based Bipolar RRAM with sub-50 μA current for Cross-bar array architecture,” IEEE Electron Devices Letter, 33 (10), 1402-1404, 2012.
  41. Y. Luo, D. Huang, W. J. Liu, Ming-Fu Li*, “Boundary condition and initial value effects in the reaction diffusion model of interface traps generation/recovery,” Journal of Semiconductors, 30(7), 074008, 2009.
  42. (Invited) Ming-Fu Li*, Daming Huang, C. Shen, T. Yang, W. J. Liu and Z. Y. Liu, “Understand NBTI Mechanism by Developing Novel Measurement Techniques,” IEEE Transactions on Device and Material Reliability, 8, 62-71, 2008.
  43. (Invited) Ming-Fu Li*, D. Huang, W. J. Liu, Z. Y. Liu, “New Insights of BTI degradation in MOSFETs with SiON Gate Dielectrics,” Electrochemistry Society (ECS) Transactions, 901, 794, 2009.
  44. D. Huang*, W. J. Liu, Z. Y. Liu, C. C. Liao , L. F. Zhang, Z. H. Gan, W. Wong ,and M. F. Li, “A Modified Charge Pumping Method for the Characterization of Interface Trap Generation in MOSFETs,” IEEE Transaction on Electronic Device, 56 (2), 267-273, 2009.
  45. Ming-Fu Li*, D. Huang, W. J. Liu, Z. Y. Liu, Y. Luo, C. C. Liao, L. F. Zhang, Z. H. Gan, W. Wong, “Issues and Controversies in NBTI Degradation and Recovery Mechanisms for p-MOSFETs with SiON Gate Dielectrics,” IEEE International Conference on Solid-State and Integrated-Circuit Technology, 2008, 604-607.
  46. Z. Y. Liu, D. Huang*, W. J. Liu, C. C. Liao, L. F. Zhang, Z. H. Gan, Waisum Wong, and Ming-Fu Li*, “Comprehensive Studies of BTI Degradations in SiON Gate Dielectric CMOS Transistors by New Measurement Techniques,” IEEE International Reliability Physics Symposium (IRPS), 2008, 733-734.
  47. W. Chen, W. J. Liu, M. Zhang, S. J. Ding*, D. W. Zhang, and Ming-Fu Li, “Multistacked Al2O3/HfO2/SiO2 tunnel layer for high-density nonvolatile memory application,” Applied Physics Letters, 91,022908, 2007.
 
 
 
 

 

Copyright© 2003-2018 复旦大学微电子学院
联系我们